Salgin, B.; Hamou, F. R.; Rohwerder, M.: Monitoring surface ion mobility on aluminum oxide: Effect of chemical pretreatments. Electrochimica Acta 110, pp. 526 - 533 (2013)
Hamou, F. R.; Biedermann, P. U.; Erbe, A.; Rohwerder, M.: Numerical simulation of probing the electric double layer by scanning electrochemical potential microscopy. Electrochimica Acta 55 (18), pp. 5210 - 5222 (2010)
Hamou, R. F.; Biedermann, P. U.; Erbe, A.; Rohwerder, M.: Numerical Investigation of Electrode Surface Potential Mapping with Scanning Electrochemical Potential Microscopy. The 12th International Scanning Probe Microscopy Conference, Sapporo, Japan (2010)
Bashir, A.; Muglali, M. I.; Hamou, R. F.; Rohwerder, M.: SECPM Study: Influence of the Tip Material and Its Coating on the Accuracy of Potential Profiling Across Electrical Double Layer at Solid/Liquid Interface. 217th ECS Meeting, Vancouver, Canada (2010)
Hamou, R. F.; Biedermann, P. U.; Erbe, A.; Rohwerder, M.: Numerical simulation of probing the electric double layer by scanning electrochemical Potential microscopy. 217th ECS Meeting, Vancouver, Canada (2010)
Hamou, R. F.; Biedermann, P. U.; Erbe, A.; Rohwerder, M.: Numerical simulation of probing the electric double layer by scanning electrochemical potential microscopy. International Workshops on Surface Modification for Chemical and Biochemical Sensing, Przegorzaly, Poland (2009)
Hamou, R. F.; Biedermann, P. U.; Erbe, A.; Rohwerder, M.: Screening effects in probing the double layer by scanning electrochemical potential microscopy. Comsol European Conference October 2009, Milan, Italy (2009)
Hamou, R. F.; Biedermann, P. U.; Erbe, A.; Rohwerder, M.: Simulation of probing the electric double layer by scanning electrochemical potential microscopy (SECPM). 11th International Fischer Symposium on Microscopy in Electrochemistry, Benediktbeuern, Germany (2009)
Hamou, R. F.; Biedermann, P. U.; Blumenau, A. T.: FEM Simulation of the Scanning Electrochemical Potential Microscopy (SECPM). SurMat Seminar, Schloß Gnadenthal, Kleve, Germany (2008)
Hamou, R. F.; Erbe, A.; Rohwerder, M.: Screening effects in probing the double layer by scanning electrochemical potential microscopy. Comsol European Conference October 2009, Milan, Italy (2009)
Hamou, R. F.; Biedermann, P. U.; Rohwerder, M.; Blumenau, A. T.: FEM Simulation of the Scanning Electrochemical Potential Microscopy (SECPM). 2nd IMPRS-SurMat Workshop in Surface and Interface Engineering in Advanced Materials, Ruhr-Universität Bochum, Bochum, Germany (2008)
Hamou, F. R.: Numerical Investigation of Scanning Electrochemical Potential Microscopy (SECPM). Dissertation, Fakultät für Physik und Astronomie der Ruhr-Universität, Bochum, Germany (2010)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
Oxides find broad applications as catalysts or in electronic components, however are generally brittle materials where dislocations are difficult to activate in the covalent rigid lattice. Here, the link between plasticity and fracture is critical for wide-scale application of functional oxide materials.
Copper is widely used in micro- and nanoelectronics devices as interconnects and conductive layers due to good electric and mechanical properties. But especially the mechanical properties degrade significantly at elevated temperatures during operating conditions due to segregation of contamination elements to the grain boundaries where they cause…
In this project we work on correlative atomic structural and compositional investigations on Co and CoNi-based superalloys as a part of SFB/Transregio 103 project “Superalloy Single Crystals”. The task is to image the boron segregation at grain boundaries in the Co-9Al-9W-0.005B alloy.
The aim of the work is to develop instrumentation, methodology and protocols to extract the dynamic strength and hardness of micro-/nano- scale materials at high strain rates using an in situ nanomechanical tester capable of indentation up to constant strain rates of up to 100000 s−1.