The structure of planar defects and defect phases in Laves phase alloys and their influence on hydrogen storage properties

Publications of Colin J. Humphreys

Journal Article (3)

1.
Journal Article
Pristovsek, M.; Han, Y.; Zhu, T.; Oehler, F.; Tang, F.; Oliver, R. A.; Humphreys, C. J.; Tytko, D.; Choi, P.-P.; Raabe, D. et al.; Brunner, F.; Weyers, M.: Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120). Semiconductor Science and Technology 31 (8), 085007 (2016)
2.
Journal Article
Zhang, S.; Cui, Y.; Griffiths, J. T.; Fu, W. Y.; Freysoldt, C.; Neugebauer, J.; Humphreys, C. J.; Oliver, R. A.: Difference in linear polarization of biaxially strained InxGa1-xN alloys on nonpolar a-plane and m-plane GaN. Physical Review B 92 (24), 245202 (2015)
3.
Journal Article
Zhang, S.; Zhang, Y.; Cui, Y.; Freysoldt, C.; Neugebauer, J.; Lieten, R. R.; Barnard, J. S.; Humphreys, C. J.: Interface structure and chemistry of GaN on Ge(111). Physical Review Letters 111 (25), 256101 (2013)

Other Interesting Articles

Go to Editor View