Lymperakis, L.: Surface rehybridization and strain effects on the composition and the properties of ternary III Nitride alloys. 19th International Conference on Crystal Growth and Epitaxy, Keystone, CO, USA (2019)
Lymperakis, L.: Elastically Frustrated Rehybridization: Implications in Alloy Ordering and Strong Compositional Limitations in Epitaxial InGaN Films. 1st German Austrian Conference of Crystal Growth, Vienna, Austria (2018)
Lymperakis, L.: Physics, growth mechanisms, and peculiarities of III-N surfaces from ab-initio. Seminar at Institute for solid state physics, Technical University Berlin, Berlin, Germany (2017)
Lymperakis, L.: Elastically frustrated rehybridization of InGaN surfaces: Implications on growth temperature and alloy ordering. Spring school on short period superlattices, Warsaw, Poland (2017)
Lymperakis, L.: Epitaxial Growth of III-Nitrides: Insights from Density Functional Theory Calculations. Seminar at University of Crete, Physics Department, Crete, Greece (2016)
Lymperakis, L.: Interplay of kinetics and thermodynamics of epitaxially grown wide bandgap semiconductors. 10th Asian-European Conference on Plasma Surface Engineering, Jeju Island, South Korea (2015)
Lymperakis, L.; Weidlich, P. H.; Eisele, H.; Schnedler, M.; Nys, J.-P.; Grandidier, B.; Stievenard, D.; Dunin-Borkowski, R.; Neugebauer, J.; Ebert, P.: Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach. 10th International Conference on Nitride Semiconductors, Washigton DC, USA (2013)
Schulz, T.; Remmele, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.: Alloy fluctuations in III-Nitrides revisited by aberration corrected transmission electron microscopy. International Workshop on Nitride Semiconductors 2012, Sapporo, Japan (2012)
Lymperakis, L.: Ab initio calculations of energetics, adatom kinetics, and electronic structure of nonpolar and semipolar III-Nitride surfaces. PolarCoN Summer School, Kostanz, Germany (2012)
Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.: Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
Lymperakis, L.; Albrecht, M.; Neugebauer, J.: Excitonic emission from a-type screw dislocations in GaN. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
von Pezold, J.; Lymperakis, L.; Neugebauer, J.: Towards an ab-initio based understanding of H-embrittlement: An atomistic study of the HELP mechanism. Joint Hydrogenius and ICNER International Workshop on Hydrogen-Materials Interactions, Kyushu, Japan (2012)
Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. 9th International Conference of Nitride Semi-Conductors, Glasgow, UK (2011)
Max Planck scientists design a process that merges metal extraction, alloying and processing into one single, eco-friendly step. Their results are now published in the journal Nature.
Scientists of the Max-Planck-Institut für Eisenforschung pioneer new machine learning model for corrosion-resistant alloy design. Their results are now published in the journal Science Advances
Hydrogen in aluminium can cause embrittlement and critical failure. However, the behaviour of hydrogen in aluminium was not yet understood. Scientists at the Max-Planck-Institut für Eisenforschung were able to locate hydrogen inside aluminium’s microstructure and designed strategies to trap the hydrogen atoms inside the microstructure. This can…
This project will aim at developing MEMS based nanoforce sensors with capacitive sensing capabilities. The nanoforce sensors will be further incorporated with in situ SEM and TEM small scale testing systems, for allowing simultaneous visualization of the deformation process during mechanical tests
Electron microscopes offer unique capabilities to probe materials with extremely high spatial resolution. Recent advancements in in situ platforms and electron detectors have opened novel pathways to explore local properties and the dynamic behaviour of materials.