Marquardt, O.; Hickel, T.; Neugebauer, J.; Gambaryan, K. M.; Aroutiounian, V. M.: Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures. Journal of Applied Physics 110 (4), pp. 043708-1 - 043708-6 (2011)
Young, T. D.; Marquardt, O.: Influence of strain and polarization on electronic properties of a GaN/AlN quantum dot. Physica Status Solidi C C6 (S2), pp. S557 - S560 (2009)
Marquardt, O.; Gambaryan, K. M.; Aroutiounian, V. M.; Hickel, T.; Neugebauer, J.: Growth process, characterization and optoelectronic properties of InAsSbP dot-pit cooperative nanostructures. VCIAN 2010, Santorini, Greece (2010)
Marquardt, O.; Hickel, T.; Neugebauer, J.: Polarization-induced charge carrier separation in realistic polar and nonpolar GaN quantum dots. Computational Materials Science on Complex Energy Landscapes Workshop, Imst, Austria (2010)
Marquardt, O.; Hickel, T.; Neugebauer, J.: Polarization-induced charge carrier separation in realistic polar and nonpolar grown GaN quantum dots. Collaborative Conference on Interacting Nanostructures CCIN'09, San Diego, CA, USA (2009)
Marquardt, O.; Hickel, T.; Neugebauer, J.: Application of an eight-band k.p model to study III-nitride semiconductor. DPG Spring Meeting 2009, Dresden, Germany (2009)
Marquardt, O.; Hickel, T.; Neugebauer, J.: Investigation of group III-nitride semiconductor nanostructures using an eight-band k.p formalism. APS March meeting, Pittsburgh, PA, USA (2009)
Marquardt, O.; Hickel, T.; Neugebauer, J.: Modeling of electronic and optical properties of GaN/AlN quantum dots by using the k.p-method. Bremen DFG Forschergruppe: Workshop in Riezlern, Riezlern, Austria (2008)
Marquardt, O.; Hickel, T.; Neugebauer, J.: Effect of strain and polarization on the electronic properties of 2-, 1- and 0-dimensional semiconductor nanostructures. Computational Materials Science Workshop, Ebernburg Castle, Germany (2008)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
Adding 30 to 50 at.% aluminum to iron results in single-phase alloys with an ordered bcc-based crystal structure, so-called B2-ordered FeAl. Within the extended composition range of this intermetallic phase, the mechanical behavior varies in a very particular way.
This project aims to correlate the localised electrical properties of ceramic materials and the defects present within their microstructure. A systematic approach has been developed to create crack-free deformation in oxides through nanoindentation, while the localised defects are probed in-situ SEM to study the electronic properties. A coupling…
By using the DAMASK simulation package we developed a new approach to predict the evolution of anisotropic yield functions by coupling large scale forming simulations directly with crystal plasticity-spectral based virtual experiments, realizing a multi-scale model for metal forming.
The aim of this project is to correlate the point defect structure of Fe1-xO to its mechanical, electrical and catalytic properties. Systematic stoichiometric variation of magnetron-sputtered Fe1-xO thin films are investigated regarding structural analysis by transition electron microscopy (TEM) and spectroscopy methods, which can reveal the defect…
In collaboration with Dr. Edgar Rauch, SIMAP laboratory, Grenoble, and Dr. Wolfgang Ludwig, MATEIS, INSA Lyon, we are developing a correlative scanning precession electron diffraction and atom probe tomography method to access the three-dimensional (3D) crystallographic character and compositional information of nanomaterials with unprecedented…
Conventional alloy development methodologies which specify a single base element and several alloying elements have been unable to introduce new alloys at an acceptable rate for the increasingly specialised application requirements of modern technologies. An alternative alloy development strategy searches the previously unexplored central regions…