Lymperakis, L.: Surface rehybridization and strain effects on the composition and the properties of ternary III Nitride alloys. 19th International Conference on Crystal Growth and Epitaxy, Keystone, CO, USA (2019)
Lymperakis, L.: Elastically Frustrated Rehybridization: Implications in Alloy Ordering and Strong Compositional Limitations in Epitaxial InGaN Films. 1st German Austrian Conference of Crystal Growth, Vienna, Austria (2018)
Lymperakis, L.: Physics, growth mechanisms, and peculiarities of III-N surfaces from ab-initio. Seminar at Institute for solid state physics, Technical University Berlin, Berlin, Germany (2017)
Lymperakis, L.: Elastically frustrated rehybridization of InGaN surfaces: Implications on growth temperature and alloy ordering. Spring school on short period superlattices, Warsaw, Poland (2017)
Lymperakis, L.: Epitaxial Growth of III-Nitrides: Insights from Density Functional Theory Calculations. Seminar at University of Crete, Physics Department, Crete, Greece (2016)
Lymperakis, L.: Interplay of kinetics and thermodynamics of epitaxially grown wide bandgap semiconductors. 10th Asian-European Conference on Plasma Surface Engineering, Jeju Island, South Korea (2015)
Lymperakis, L.; Weidlich, P. H.; Eisele, H.; Schnedler, M.; Nys, J.-P.; Grandidier, B.; Stievenard, D.; Dunin-Borkowski, R.; Neugebauer, J.; Ebert, P.: Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach. 10th International Conference on Nitride Semiconductors, Washigton DC, USA (2013)
Schulz, T.; Remmele, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.: Alloy fluctuations in III-Nitrides revisited by aberration corrected transmission electron microscopy. International Workshop on Nitride Semiconductors 2012, Sapporo, Japan (2012)
Lymperakis, L.: Ab initio calculations of energetics, adatom kinetics, and electronic structure of nonpolar and semipolar III-Nitride surfaces. PolarCoN Summer School, Kostanz, Germany (2012)
Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.: Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
Lymperakis, L.; Albrecht, M.; Neugebauer, J.: Excitonic emission from a-type screw dislocations in GaN. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
von Pezold, J.; Lymperakis, L.; Neugebauer, J.: Towards an ab-initio based understanding of H-embrittlement: An atomistic study of the HELP mechanism. Joint Hydrogenius and ICNER International Workshop on Hydrogen-Materials Interactions, Kyushu, Japan (2012)
Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. 9th International Conference of Nitride Semi-Conductors, Glasgow, UK (2011)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
Hydrogen embrittlement (HE) is one of the most dangerous embrittlement problems in metallic materials and advanced high-strength steels (AHSS) are particularly prone to HE with the presence of only a few parts-per-million of H. However, the HE mechanisms in these materials remain elusive, especially for the lightweight steels where the composition…
Conventional alloy development methodologies which specify a single base element and several alloying elements have been unable to introduce new alloys at an acceptable rate for the increasingly specialised application requirements of modern technologies. An alternative alloy development strategy searches the previously unexplored central regions…
The key to the design and construction of advanced materials with tailored mechanical properties is nano- and micro-scale plasticity. Significant influence also exists in shaping the mechanical behavior of materials on small length scales.
The structure of grain boundaries (GBs) is dependent on the crystallographic structure of the material, orientation of the neighbouring grains, composition of material and temperature. The abovementioned conditions set a specific structure of the GB which dictates several properties of the materials, e.g. mechanical behaviour, diffusion, and…