Petrov, M.; Lymperakis, L.; Neugebauer, J.; Stefaniuk, R.; Dluzewski, P.: Nonlinear Elastic Effects in Group III-Nitrides: From ab-initio to Finite Element Calculation. 17th International Conference on Computer Methods in Mechanics CMM-2007, Spala, Poland (2007)
Petrov, M.; Lymperakis, L.; Neugebauer, J.; Stefaniuk, R.; Dluzewski, P.: Nonlinear Elastic Effects in Group III-Nitrides: From ab-initio to Finite Element Calculation. 17th International Conference on Computer Methods in Mechanics CMM-2007, Spala, Poland (2007)
Lymperakis, L.; Neugebauer, J.: Ab-initio based multiscale analysis of the 5D configurational space of Grain Boundaries in Aluminum. Spring meeting of the German Physical Society (DPG), Regensburg, Germany (2007)
Petrov, M.; Lymperakis, L.; Neugebauer, J.: Nonlinear Elastic Effects in Group III-Nitrides. Spring meeting of the German Physical Society (DPG), Regensburg, Germany (2007)
Marquardt, O.; Wahn, M.; Lymperakis, L.; Hickel, T.; Neugebauer, J.: Implementation and application of a multi-scale approach to electronic properties of group III-nitride based semiconductor nanostructures. Workshop on Nitride Based Nanostructures, Berlin, Germany (2007)
Lymperakis, L.: Ab-initio based multiscale caclulations of Grain Boundaries in aluminum. 1. Harzer Ab initio Workshop, Clausthal-Zellerfeld, Germany (2006)
Lymperakis, L.; Neugebauer, J.: Kinetically stabilized ordering in AlGaN alloys. Institute of Fundamental Technological Research, Polish Academy of Sciences, Colloquium, Warsaw/Poland (2006)
Lymperakis, L.; Neugebauer, J.: Ab-initio based multiscale calculations of low-angle grain boundaries in Aluminum. DPG spring meeting, Dresden, Germany (2006)
Lymperakis, L.: Ab-initio based multiscale calculations of extended defects in condensed matter. Ab initio Description of Iron and Steel (ADIS2006), Ringberg Castle (2006)
Lymperakis, L.; Neugebauer, J.: Electronic properties of non-stoichiometric dislocation cores in GaN. Materials Research Society fall meeting, Boston, MA, USA (2005)
Lymperakis, L.; Neugebauer, J.: The role of strain fields, core structure, and native defects on the electrical activity of dislocations in GaN. The 6th International Conference on Nitride Semiconductors, Bremen (2005)
Lymperakis, L.; Neugebauer, J.: Formation of steps and vicinal surfaces on GaN (0001) surfaces: Implications on surface morphologies and surface roughening. DPG spring meeting, Berlin, Germany (2005)
Duff, A.; Lymperakis, L.; Neugebauer, J.: Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: An Ab Initio Approach. 10th International Conference on Nitride Semiconductors, Washigton DC, USA (2013)
Remmele, T.; Schulz, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.: Quantitative measurement of composition fluctuations in InGaN quantum wells. 15th European Microscopy Congress, Manchester Central, UK (2012)
Ceremony on 16 April with the Minister for Culture and Science of North Rhine-Westphalia, Ina Brandes, the Lord Mayor of Düsseldorf, Stephan Keller, and the President of the Max Planck Society, Patrick Cramer