Vega-Paredes, M.; Scheu, C.; Aymerich Armengol, R.: Expanding the Potential of Identical Location Scanning Transmission Electron Microscopy for Gas Evolving Reactions: Stability of Rhenium Molybdenum Disulfide Nanocatalysts for Hydrogen Evolution Reaction. ACS Applied Materials and Interfaces 15 (40), pp. 46895 - 46901 (2023)
Aymerich Armengol, R.: Techniques for the assessment of the stability of (sea) water splitting nanocatalysts. Korean Institute for Energy Research, Jeju, South Korea (2023)
Vega-Paredes, M.; Aymerich Armengol, R.; Scheu, C.: Determining the degradation mechanisms and active species of electrocatalysts by identical location electron microscopy. NRF-DFG meeting “Electrodes for direct sea-water splitting and microstructure based stability analyses”, Korean Institute for Energy Research, Jeju, South Korea (2023)
Aymerich Armengol, R.: Determination of the structural and electrochemical stability of nanocatalysts for electrolyzer applications. Chemistry Department, Kangwon National University, Chuncheon-si, South Korea (2023)
Aymerich Armengol, R.: Understanding the stability of nanomaterials through electron microscopy techniques. Physics Department, Technical University of Denmark, Kongens Lyngby, Denmark (2023)
Aymerich Armengol, R.: Stability of 2D oxide and chalcogenide nanomaterials under synthesis and application conditions. MRSEC Seminar Series, Northwestern University, Evanston, IL, USA (2023)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
Project A02 of the SFB1394 studies dislocations in crystallographic complex phases and investigates the effect of segregation on the structure and properties of defects in the Mg-Al-Ca System.
Within this project, we will investigate the micromechanical properties of STO materials with low and higher content of dislocations at a wide range of strain rates (0.001/s-1000/s). Oxide ceramics have increasing importance as superconductors and their dislocation-based electrical functionalities that will affect these electrical properties. Hence…