Woods, E.; Singh, M. P.; Kim, S.-H.; Schwarz, T.; Douglas, J. O.; El-Zoka, A.; Giulani, F.; Gault, B.: A versatile and reproducible cryo-sample preparation methodology for atom probe studies. Microscopy and Microanalysis, ozad120 29 (6), pp. 1992 - 2003 (2023)
Schwarz, T.; Yu, W.; Zhan, H.; Gault, B.; Gourlay, C.; McCarroll, I.: Uncovering Ce-rich clusters and their role in precipitation strengthening of an AE44 alloy. Scripta Materialia 232, 115498 (2023)
Woods, E.; Aota, L. S.; Schwarz, T.; Kim, S.-H.; Douglas, J. O.; Singh, M. P.; Gault, B.: In-situ cryogenic protective layers and metal coatings in cryogenic FIB. IMC20 - 20th International Microscopy Congress - Pre-congress workshop, Cryogenic Atom Probe Tomography, Busan, South Korea (2023)
Schwarz, T.: Atom probe tomography: from water to complex liquids to the application of studying liquid-solid interfaces at the near atomic level. APT&M 23, Leuven, Belgium (2023)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
The aim of the work is to develop instrumentation, methodology and protocols to extract the dynamic strength and hardness of micro-/nano- scale materials at high strain rates using an in situ nanomechanical tester capable of indentation up to constant strain rates of up to 100000 s−1.
This project deals with the phase quantification by nanoindentation and electron back scattered diffraction (EBSD), as well as a detailed analysis of the micromechanical compression behaviour, to understand deformation processes within an industrial produced complex bainitic microstructure.
Within this project, we will use an infra-red laser beam source based selective powder melting to fabricate copper alloy (CuCrZr) architectures. The focus will be on identifying the process parameter-microstructure-mechanical property relationships in 3-dimensional CuCrZr alloy lattice architectures, under both quasi-static and dynamic loading…
Copper is widely used in micro- and nanoelectronics devices as interconnects and conductive layers due to good electric and mechanical properties. But especially the mechanical properties degrade significantly at elevated temperatures during operating conditions due to segregation of contamination elements to the grain boundaries where they cause…