Bieler, T. R.; Crimp, M. A.; Ma, A.; Roters, F.; Raabe, D.: A Slip Interaction Based Measure of Damage Nucleation in Grain Boundaries. 3rd International Conference on Multiscale Materials Modeling, Freiburg, Germany (2006)
Zambaldi, C.; Roters, F.; Raabe, D.: Spherical indentation modeling for the investigation of primary recrystallization in a single-crystal nickel-base superalloy. Plasticity, Halifax, Canada (2006)
Zaafarani, N.; Raabe, D.; Singh, R. N.; Roters, F.; Zaefferer, S.; Zambaldi, C.: 3D EBSD characterization and crystal plasticity FE simulation of the texture and microstructure below a nanoindent in Cu. Plasticity Conference 2006, Halifax, Canada (2006)
Roters, F.: Mapping the crystal orientation distribution function to discrete orientations in crystal plasticity finite element forming simulations of bulk materials. International Conference on Aluminium Alloys ICAA10, Vancouver, Canada (2006)
Roters, F.; Ma, A.; Zaafarani, N.; Raabe, D.: Crystal plasticity FEM modeling at large scales and at small scales. GAMM annual meeting, Berlin, Germany (2006)
Zaafarani, N.; Raabe, D.; Singh, R. N.; Roters, F.: Three dimensional investigation of the texture and microstructure below a nanoindent in a Cu single crystal using 3D EBSD and crystal plasticity finite element simulations. DPG Frühjahrstagung, Dresden, Germany (2006)
Ma, A.; Roters, F.; Raabe, D.: A dislocation density based constitutive law for BCC materials in crystal plasticity FEM. 15th International Workshop on Computational Mechanics of Materials, MPI für Eisenforschung, Düsseldorf (2005)
Roters, F.: The 15th International Workshop on Computational Mechanics of Materials (IWCMM 15). The 15th International Workshop on Computational Mechanics of Materials (IWCMM 15), MPIE (2005)
Ma, A.; Roters, F.; Raabe, D.: A dislocation density based constitutive model for crystal plasticity FEM. 14th International Conference on Textures of Materials (ICOTOM 14), Leuven, Belgium (2005)
Roters, F.; Jeon-Haurand, H. S.; Tikhovskiy, I.; Raabe, D.: A Texture Evolution Study Using the Texture Component Crystal Plasticity FEM. 14th International Conference on Textures of Materials (ICOTOM 14), Leuven, Belgium (2005)
Ma, A.; Roters, F.; Raabe, D.: Introducing the Effect of Grain Boundaries into Crystal Plasticity FEM Using a Non Local Dislocation Density Based Constitutive Model. Theory and Application to FCC Bi-Crystals. Euromech Colloquium 463: Size dependent mechanics of materials, Groningen, Niederlande (2005)
Roters, F.: Development of a dislocation density based constitutive model for crystal plasticity FEM with special regard to grain boundaries. Institutsseminar, MPI für Mathematik in den Naturwissenschaften, Leipzig, Germany (2005)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
Hydrogen embrittlement remains a strong obstacle to the durability of high-strength structural materials, compromising their performance and longevity in critical engineering applications. Of particular relevance is the effect of mobile and trapped hydrogen at interfaces, such as grain and phase boundaries, since they often determine the material’s…
Grain boundaries are one of the most prominent defects in engineering materials separating different crystallites, which determine their strength, corrosion resistance and failure. Typically, these interfaces are regarded as quasi two-dimensional defects and controlling their properties remains one of the most challenging tasks in materials…
Project A02 of the SFB1394 studies dislocations in crystallographic complex phases and investigates the effect of segregation on the structure and properties of defects in the Mg-Al-Ca System.
Within this project, we will investigate the micromechanical properties of STO materials with low and higher content of dislocations at a wide range of strain rates (0.001/s-1000/s). Oxide ceramics have increasing importance as superconductors and their dislocation-based electrical functionalities that will affect these electrical properties. Hence…