Lymperakis, L.: Surface rehybridization and strain effects on the composition and the properties of ternary III Nitride alloys. 19th International Conference on Crystal Growth and Epitaxy, Keystone, CO, USA (2019)
Lymperakis, L.: Elastically Frustrated Rehybridization: Implications in Alloy Ordering and Strong Compositional Limitations in Epitaxial InGaN Films. 1st German Austrian Conference of Crystal Growth, Vienna, Austria (2018)
Lymperakis, L.: Physics, growth mechanisms, and peculiarities of III-N surfaces from ab-initio. Seminar at Institute for solid state physics, Technical University Berlin, Berlin, Germany (2017)
Lymperakis, L.: Elastically frustrated rehybridization of InGaN surfaces: Implications on growth temperature and alloy ordering. Spring school on short period superlattices, Warsaw, Poland (2017)
Lymperakis, L.: Epitaxial Growth of III-Nitrides: Insights from Density Functional Theory Calculations. Seminar at University of Crete, Physics Department, Crete, Greece (2016)
Lymperakis, L.: Interplay of kinetics and thermodynamics of epitaxially grown wide bandgap semiconductors. 10th Asian-European Conference on Plasma Surface Engineering, Jeju Island, South Korea (2015)
Lymperakis, L.; Weidlich, P. H.; Eisele, H.; Schnedler, M.; Nys, J.-P.; Grandidier, B.; Stievenard, D.; Dunin-Borkowski, R.; Neugebauer, J.; Ebert, P.: Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach. 10th International Conference on Nitride Semiconductors, Washigton DC, USA (2013)
Schulz, T.; Remmele, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.: Alloy fluctuations in III-Nitrides revisited by aberration corrected transmission electron microscopy. International Workshop on Nitride Semiconductors 2012, Sapporo, Japan (2012)
Lymperakis, L.: Ab initio calculations of energetics, adatom kinetics, and electronic structure of nonpolar and semipolar III-Nitride surfaces. PolarCoN Summer School, Kostanz, Germany (2012)
Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.: Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
Lymperakis, L.; Albrecht, M.; Neugebauer, J.: Excitonic emission from a-type screw dislocations in GaN. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
von Pezold, J.; Lymperakis, L.; Neugebauer, J.: Towards an ab-initio based understanding of H-embrittlement: An atomistic study of the HELP mechanism. Joint Hydrogenius and ICNER International Workshop on Hydrogen-Materials Interactions, Kyushu, Japan (2012)
Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. 9th International Conference of Nitride Semi-Conductors, Glasgow, UK (2011)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
Statistical significance in materials science is a challenge that has been trying to overcome by miniaturization as in micropillar compression. However, this process is still limited to 4-5 tests per parameter variance, i.e. Size, orientation, grain size, composition, etc. as the process of fabricating pillars and testing has to be done one by one.…
Because of their excellent corrosion resistance, high wear resistance and comparable low density, Fe–Al-based alloys are an interesting alternative for replacing stainless steels and possibly even Ni-base superalloys. Recent progress in increasing strength at high temperatures has evoked interest by industries to evaluate possibilities to employ…
This project (B06) is part of the SFB 1394 collaborative research centre (CRC), focused on structural and atomic complexity, defect phases and how they are related to material properties. The project started in January 2020 and has three important work packages: (i) fracture analysis of intermetallic phases, (ii) the relationship of fracture to…
Grain boundaries (GBs) affect many macroscopic properties of materials. In the case of metals grain growth, Hall–Petch hardening, diffusion, and electrical conductivity, for example, are influenced or caused by GBs. The goal of this project is to investigate the different GB phases (also called complexions) that can occur in tilt boundaries of fcc…