Dehm, G.; Rühle, M.; Conway, H. D.; Raj, R.: A microindentation method for estimating interfacial shear strength and its use in studying the influence of titanium transition layers on the interface strength of epitaxial copper films on sapphire. Acta Materialia 45 (2), pp. 489 - 499 (1997)
Dehm, G.; Scheu, C.; Raj, R.; Rühle, M.: Growth, structure and interfaces of Cu and Cu/Ti thin films on (0001)alpha-Al2O3. Materials Science Forum 207-209 (1), pp. 217 - 220 (1996)
Dehm, G.; Raj, R.; Rühle, M.: Influence of Interfacial Layers on the Ultimate Shear Strength of Copper/Sapphire Interfaces. Materials Science Forum 207-209 (2), pp. 597 - 600 (1996)
Möbus, G.; Schumann, E.; Dehm, G.; Rühle, M.: Measurement of Coherency States of Metal-Ceramic Interfaces by HRTEM Image Processing. Physica Status Solidi A 150 (1), pp. 77 - 87 (1995)
Dehm, G.; Rühle, M.; Ding, G.; Raj, R.: Growth and Structure of Copper Thin Films Deposited on (0001) Sapphire by Molecular Beam Epitaxy. Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties 71 (6), pp. 1111 - 1124 (1995)
Kirchlechner, C.; Kečkéš, J.; Micha, J.-S.; Dehm, G.: In Situ μLaue: Instrumental Setup for the Deformation of Micron Sized Samples. In: Neutrons and Synchrotron Radiation in Engineering Materials Science: From Fundamentals to Applications: Second Edition, pp. 425 - 438 (Eds. Staron, P.; Schreyer, A.; Clemens, H.; Mayer, S.). wiley, Hoboken, NJ, USA (2017)
Dehm, G.; Legros, M.; Kiener, D.: In-situ TEM Straining Experiments: Recent Progress in Stages and Small-Scale Mechanics. In: In-situ Electron Microscopy: SEM and TEM Applications in Physics, Chemistry and Materials Science, pp. 227 - 254 (Ed. Dehm, G.). Wiley VCH Verlag, Weinheim, Germany (2012)
Dehm, G.: Das Erich-Schmid-Institut für Materialwissenschaft (ESI) der Österreichischen Akademie der Wissenschaften. In: Handbuch der Nanoanalytik Steiermark, NanoNet Styria, 1 Ed., pp. 1 - 311 (Ed. Rom , W.). W. Rom, Graz, Austria (2005)
Dehm, G.; Müllner, P.: TEM-Observation of Dislocations in Polycrystalline Metal Films. In: The Encyclopedia of Materials: Science and Technology, Vol. 1, pp. 2329 - 2331 (Eds. Buschow, .H.J.; Cahn, R.; Flemings, M.; Ilschner, .; Kramer, E. et al.) (2001)
Microstructure of Ni2B Laser-Induced Surface-Alloyed α-Fe (Materials Resaerch Symposium Proceedings, Phase Transformations and Systems Driven far from Equilibrium, 481). MRS Fall Meeting´97, Boston, MA, USA. (2001)
Scientists of the Max-Planck-Institut für Eisenforschung pioneer new machine learning model for corrosion-resistant alloy design. Their results are now published in the journal Science Advances
We simulate the ionization contrast in field ion microscopy arising from the electronic structure of the imaged surface. For this DFT calculations of the electrified surface are combined with the Tersoff-Hamann approximation to electron tunneling. The approach allows to explain the chemical contrast observed for NiRe alloys.
Data-rich experiments such as scanning transmission electron microscopy (STEM) provide large amounts of multi-dimensional raw data that encodes, via correlations or hierarchical patterns, much of the underlying materials physics. With modern instrumentation, data generation tends to be faster than human analysis, and the full information content is…
It is very challenging to simulate within DFT extreme electric fields (a few 1010 V/m) at a surface, e.g. for studying field evaporation, the key mechanism in atom probe tomography (APT). We have developed a straight-forward scheme to incorporate an ideal plate counter-electrode in a nominally charged repeated-slab calculation by means of a generalized dipole correction of the standard electrostatic potential obtained from fully periodic FFT.
In order to estimate the kinetics of thermally activated processes, one must determine the energy of the transition state. This transition state is a first-order saddle point on the potential energy surface, i.e., it is a maximum along the reaction coordinate, but a minimum with respect to all other directions in configurational space. We have…