Chemical fluctuations in polycrystalline thin-films for photovoltaic devices
Within this project we investigate chemical fluctuations at the nanometre scale in polycrystalline Cu(In,Ga)Se2 and CuInS2 thin-flims used as absorber material in solar cells.
Secondary phase formation as well as chemical fluctuations such as impurity segregation at structural defects like grain boundaries can significantly affect the optoelectronical properties of photovoltaic materials. Within this project we investigate such chemical fluctuations at the nanometre scale in polycrystalline Cu(In,Ga)Se2 and CuInS2 thin-flims used as absorber material in solar cells. We apply combined scanning transmission electron microscopy (STEM) with energy dispersive X-ray spectroscopy (EDX) as well as correlated transmission Kikuchi diffraction (TKD) and atom probe tomography (APT).
Image quality maps from a TKD measurement of an APT needle and corresponding unique color map showing a RHAGB (blue) and ∑3 TB (red). Na & C co-segregation as well as Cu enrichment (blue iso-concentration surface) at the RHAGB. Concentration profile across the RHAGB revealing an atomic redistribution.