Chemical fluctuations in polycrystalline thin-films for photovoltaic devices
Within this project we investigate chemical fluctuations at the nanometre scale in polycrystalline Cu(In,Ga)Se2 and CuInS2 thin-flims used as absorber material in solar cells.
Secondary phase formation as well as chemical fluctuations such as impurity segregation at structural defects like grain boundaries can significantly affect the optoelectronical properties of photovoltaic materials. Within this project we investigate such chemical fluctuations at the nanometre scale in polycrystalline Cu(In,Ga)Se2 and CuInS2 thin-flims used as absorber material in solar cells. We apply combined scanning transmission electron microscopy (STEM) with energy dispersive X-ray spectroscopy (EDX) as well as correlated transmission Kikuchi diffraction (TKD) and atom probe tomography (APT).
Accumulation and diffusion of Na (green) along Cu depleted structural defects (blue) in epitaxial grown CuInSe2 films on GaAs substrate
Mechanistic description of In/Ga interdiffusion. STEM-BF image of a cross section from a Na2Se treated CuInSe2 film grown on GaAs substrate and corresponding Ga, In and Cu elemental maps.
Mechanistic description of In/Ga interdiffusion. STEM-BF image of a cross section from a Na2Se treated CuInSe2 film grown on GaAs substrate and corresponding Ga, In and Cu elemental maps.
Image quality maps from a TKD measurement of an APT needle and corresponding unique color map showing a RHAGB (blue) and ∑3 TB (red). Na & C co-segregation as well as Cu enrichment (blue iso-concentration surface) at the RHAGB. Concentration profile across the RHAGB revealing an atomic redistribution.
Image quality maps from a TKD measurement of an APT needle and corresponding unique color map showing a RHAGB (blue) and ∑3 TB (red). Na & C co-segregation as well as Cu enrichment (blue iso-concentration surface) at the RHAGB. Concentration profile across the RHAGB revealing an atomic redistribution.
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
Hydrogen embrittlement remains a strong obstacle to the durability of high-strength structural materials, compromising their performance and longevity in critical engineering applications. Of particular relevance is the effect of mobile and trapped hydrogen at interfaces, such as grain and phase boundaries, since they often determine the material’s…
Grain boundaries are one of the most prominent defects in engineering materials separating different crystallites, which determine their strength, corrosion resistance and failure. Typically, these interfaces are regarded as quasi two-dimensional defects and controlling their properties remains one of the most challenging tasks in materials…
Project A02 of the SFB1394 studies dislocations in crystallographic complex phases and investigates the effect of segregation on the structure and properties of defects in the Mg-Al-Ca System.
Within this project, we will investigate the micromechanical properties of STO materials with low and higher content of dislocations at a wide range of strain rates (0.001/s-1000/s). Oxide ceramics have increasing importance as superconductors and their dislocation-based electrical functionalities that will affect these electrical properties. Hence…
