Bieler, T. R.; Crimp, M. A.; Ma, A.; Roters, F.; Raabe, D.: A Slip Interaction Based Measure of Damage Nucleation in Grain Boundaries. 3rd International Conference on Multiscale Materials Modeling, Freiburg, Germany (2006)
Zambaldi, C.; Roters, F.; Raabe, D.: Spherical indentation modeling for the investigation of primary recrystallization in a single-crystal nickel-base superalloy. Plasticity, Halifax, Canada (2006)
Zaafarani, N.; Raabe, D.; Singh, R. N.; Roters, F.; Zaefferer, S.; Zambaldi, C.: 3D EBSD characterization and crystal plasticity FE simulation of the texture and microstructure below a nanoindent in Cu. Plasticity Conference 2006, Halifax, Canada (2006)
Roters, F.: Mapping the crystal orientation distribution function to discrete orientations in crystal plasticity finite element forming simulations of bulk materials. International Conference on Aluminium Alloys ICAA10, Vancouver, Canada (2006)
Roters, F.; Ma, A.; Zaafarani, N.; Raabe, D.: Crystal plasticity FEM modeling at large scales and at small scales. GAMM annual meeting, Berlin, Germany (2006)
Zaafarani, N.; Raabe, D.; Singh, R. N.; Roters, F.: Three dimensional investigation of the texture and microstructure below a nanoindent in a Cu single crystal using 3D EBSD and crystal plasticity finite element simulations. DPG Frühjahrstagung, Dresden, Germany (2006)
Ma, A.; Roters, F.; Raabe, D.: A dislocation density based constitutive law for BCC materials in crystal plasticity FEM. 15th International Workshop on Computational Mechanics of Materials, MPI für Eisenforschung, Düsseldorf (2005)
Roters, F.: The 15th International Workshop on Computational Mechanics of Materials (IWCMM 15). The 15th International Workshop on Computational Mechanics of Materials (IWCMM 15), MPIE (2005)
Ma, A.; Roters, F.; Raabe, D.: A dislocation density based constitutive model for crystal plasticity FEM. 14th International Conference on Textures of Materials (ICOTOM 14), Leuven, Belgium (2005)
Roters, F.; Jeon-Haurand, H. S.; Tikhovskiy, I.; Raabe, D.: A Texture Evolution Study Using the Texture Component Crystal Plasticity FEM. 14th International Conference on Textures of Materials (ICOTOM 14), Leuven, Belgium (2005)
Ma, A.; Roters, F.; Raabe, D.: Introducing the Effect of Grain Boundaries into Crystal Plasticity FEM Using a Non Local Dislocation Density Based Constitutive Model. Theory and Application to FCC Bi-Crystals. Euromech Colloquium 463: Size dependent mechanics of materials, Groningen, Niederlande (2005)
Roters, F.: Development of a dislocation density based constitutive model for crystal plasticity FEM with special regard to grain boundaries. Institutsseminar, MPI für Mathematik in den Naturwissenschaften, Leipzig, Germany (2005)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
Oxides find broad applications as catalysts or in electronic components, however are generally brittle materials where dislocations are difficult to activate in the covalent rigid lattice. Here, the link between plasticity and fracture is critical for wide-scale application of functional oxide materials.
Copper is widely used in micro- and nanoelectronics devices as interconnects and conductive layers due to good electric and mechanical properties. But especially the mechanical properties degrade significantly at elevated temperatures during operating conditions due to segregation of contamination elements to the grain boundaries where they cause…
In this project we work on correlative atomic structural and compositional investigations on Co and CoNi-based superalloys as a part of SFB/Transregio 103 project “Superalloy Single Crystals”. The task is to image the boron segregation at grain boundaries in the Co-9Al-9W-0.005B alloy.
The aim of the work is to develop instrumentation, methodology and protocols to extract the dynamic strength and hardness of micro-/nano- scale materials at high strain rates using an in situ nanomechanical tester capable of indentation up to constant strain rates of up to 100000 s−1.