Publications of Andrew Duff

Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity. Physica Status Solidi B 252 (5), pp. 855 - 865 (2015)

Duff, A.; Lymperakis, L.; Neugebauer, J.: Understanding and controlling indium incorporation and surface segregation on In_xGa_1-xN surfaces: An ab initio approach. Physical Review B 89 (8), 085307 (2014)

Schulz, T.; Duff, A.; Remmele, M.; Korytov, T.; Markut, M.; Albrecht, M.; Lymperakis, L.; Neugebauer, J.; Chèze, C.; Skierbiszewski, C.: Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Journal of Applied Physics 115 (3), 033113 (2014)

Korbmacher, D.; Glensk, A.; Grabowski, B.; Hickel, T.; Duff, A.; Finnis, M. W.; Neugebauer, J.: Ab initio description of the Ti BCC to ω transition at finite temperatures. In: PTM 2015 - Proceedings of the International Conference on Solid-Solid Phase Transformations in Inorganic Materials 2015, pp. 755 - 756 (Eds. Chen, L.-Q.; Militzer, M.; Botton, G.; Howe, J.; Sinclair, C. W. et al.). International Conference on Solid-Solid Phase Transformations in Inorganic Materials 2015, PTM 2015, Whistler, BC, Canada, June 28, 2015 - July 03, 2015. International Conference on Solid-Solid Phase Transformations in Inorganic Materials 2015, Whistler, BC, Canada (2015)

Korbmacher, D.; Glensk, A.; Grabowski, B.; Hickel, T.; Neugebauer, J.; Duff, A.; Finnis, M. W.: Ab initio description of the Ti bcc to omega transition at finite temperatures. DPG-Frühjahrstagung 2015, Berlin, Germany (2015)

Korbmacher, D.; Glensk, A.; Grabowski, B.; Hickel, T.; Neugebauer, J.; Duff, A.; Finnis, M. W.: Ab initio description of the Ti bcc to omega transition at finite temperatures. PTM 2015, International Conference on Solid-Solid Phase Transformations in Inorganic Materials, Whistler, BC, Canada (2015)

Schulz, T.; Remmele, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.: Alloy fluctuations in III-Nitrides revisited by aberration corrected transmission electron microscopy. International Workshop on Nitride Semiconductors 2012, Sapporo, Japan (2012)

Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.: Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)

Duff, A.: Ab-initio modelling of InGaN: Research and impact on research career. SINOPLE mid-term meeting, Harnack-Haus, Berlin, Germany (2011)

Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab-initio Study of Indium Adsorption in c-plane InGaN. SINOPLE meeting, Düsseldorf, Germany (2011)

Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. 9th International Conference of Nitride Semi-Conductors, Glasgow, UK (2011)

Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab-initio based growth simulations of Ga- and N- polar InGaN surfaces: A comparitive study. CM-Workshop, Akademie Biggesee, Attendorn, Germany (2011)

Grabowski, B.; Korbmacher, D.; Glensk, A.; Duff, A.; Hickel, T.; Neugebauer, J.: Ab initio description of dynamically unstable systems from zero Kelvin up to the melting point. CALPHAD 2014, Changsha, China (2014)

Duff, A.; Lymperakis, L.; Neugebauer, J.: Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: An Ab Initio Approach. 10th International Conference on Nitride Semiconductors, Washigton DC, USA (2013)

Markurt, T.; Rotunno, E.; Grillo, V.; Duff, A.; Lymperakis, L.; Schulz, T.; Remmele, T.; Albrecht, M.: Composition analysis of InGaN quantum wells by STEM-HAADF. 15th European Microscopy Congress, Manchester Central, UK (2012)

Remmele, T.; Schulz, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.: Quantitative measurement of composition fluctuations in InGaN quantum wells. 15th European Microscopy Congress, Manchester Central, UK (2012)

Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. SINOPLE mid-term meeting, Berlin, Germany (2011)