Herbig, M.; Choi, P.; Raabe, D.: Atom Probe Tomography and Correlative TEM/APT at the MPIE. Inauguration of the Atom Probe at the Institute for Physics IA at the RWTH Aachen, Aachen, Germany (2014)
Herbig, M.; Raabe, D.; Li, Y.; Choi, P.; Zaefferer, S.; Goto, S.: High Throughput Quantification of Grain Boundary Segregation by Correlative TEM and APT. TMS 2014, Solid-State Interfaces III Symposium, San Diego, CA, USA (2014)
Herbig, M.; Choi, P.-P.; Raabe, D.: Atom Probe Tomography and Correlative TEM/APT at the MPIE. Mini-Symposium Atom Probe Tomography, National APT Facility Eindhoven, TU Delft, Delft, The Netherlands (2014)
Herbig, M.; Raabe, D.; Li, Y.; Choi, P.-P.; Zaefferer, S.; Goto, S.: High Throughput Quantification of Grain Boundary Segregation by Correlative Transmission Electron Microscopy and Atom Probe Tomography. International Conference on Atom Probe Tomography & Microscopy 2014, Stuttgart, Germany (2014)
Choi, P.: Characterization of κ-carbide precipitates in austenitic Fe–Mn–Al–C steels using atom probe tomography. Thermec 2013, Las Vegas, NV, USA (2013)
Herbig, M.; Raabe, D.; Li, Y. J.; Choi, P.; Zaefferer, S.; Goto, S.: Quantification of Grain Boundary Segregation in Nanocrystalline Material. Seminar at Department Microstructure Physics and Alloy Design, MPI für Eisenforschung, Düsseldorf, Germany (2013)
Herbig, M.; Choi, P.; Raabe, D.: Combining Structural and Chemical Information on the nm Scale by Correlative TEM and APT Characterization. European Atom Probe Workshop 2013 at ETH Zürich, Zürich, Switzerland (2013)
In this project we conduct together with Dr. Sandlöbes at RWTH Aachen and the department of Prof. Neugebauer ab initio calculations for designing new Mg – Li alloys. Ab initio calculations can accurately predict basic structural, mechanical, and functional properties using only the atomic composition as a basis.
The wide tunability of the fundamental electronic bandgap by size control is a key attribute of semiconductor nanocrystals, enabling applications spanning from biomedical imaging to optoelectronic devices. At finite temperature, exciton-phonon interactions are shown to exhibit a strong impact on this fundamental property.