Bitzek, E.: The Origin of Deformation-Induced Topological Anisotropy in Silica Glass. International Conference on the Strength of Materials ICSMA 19, Metz, France (2022)
Meier de Andrade, A.; Bitzek, E.: Fracture in the Presence of Hydrogen - Influence of the Potential. The 11th International Conference on Multiscale Materials Modeling, Prague, Czech Republic (2024)
Meier de Andrade, A.; Bitzek, E.: Fracture in the Presence of Hydrogen - Influence of the Potential. The XXII Brazilian Materials Research Society (B-MRS) Meeting 2024, Santos, Brazil (2024)
Atila, A.: Influence of Structure and Topology on the Deformation Behavior and Fracture of Oxide Glasses. Dissertation, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) (2023)
Poul, M.; Huber, L.; Bitzek, E.; Neugebauer, J.: Systematic Structure Datasets for Machine Learning Potentials: Application to Moment Tensor Potentials of Magnesium and its Defects. arXiv (2022)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
Here the focus lies on investigating the temperature dependent fracture of materials down to the individual microstructural length-scales, such as respective phases, grain/phase boundaries or hetero-interfaces, to understand brittle-ductile transitions in deformation and the role of chemistry or crystallography on it.
This project aims to correlate the localised electrical properties of ceramic materials and the defects present within their microstructure. A systematic approach has been developed to create crack-free deformation in oxides through nanoindentation, while the localised defects are probed in-situ SEM to study the electronic properties. A coupling…
The aim of the work is to develop instrumentation, methodology and protocols to extract the dynamic strength and hardness of micro-/nano- scale materials at high strain rates using an in situ nanomechanical tester capable of indentation up to constant strain rates of up to 100000 s−1.