Lymperakis, L.; Abu-Farsakh, H.; Marquardt, O.; Hickel, T.; Neugebauer, J.: Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures. Physica Status Solidi B 248 (8), pp. 1837 - 1852 (2011)

Abu-Farsakh, H.; Neugebauer, J.: Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: An ab initio study. Physical Review B 79, 155311, pp. 155311 - 155323 (2009)

Albrecht, M.; Abu-Farsakh, H.; Remmele, T.; Geelhaar, L.; Riechert, H.; Neugebauer, J.: Compositional Correlation and Anticorrelation in Quaternary Alloys: Competition Between Bulk Thermodynamics and Surface Kinetics. Physical Review Letters 99 (20), 206103 (2007)

Abu-Farsakh, H.; Neugebauer, J.: Exploring the unusual diffusion of N adatoms on GaAs(001) using first principles calculations. DPG Frühjahrstagung 2010, Regensburg, Germany (2010)

Abu-Farsakh, H.; Neugebauer, J.: Exploring the unusual diffusion of N adatoms at GaAs(001) surface. Computational Materials Science on Complex Energy Landscapes Workshop, Imst, Austria (2010)

Abu-Farsakh, H.; Neugebauer, J.: Solubility and surface kinetics of N in diluted nitrides. Computational Materials Science Workshop, Ebernburg Castle, Germany (2008)

Abu-Farsakh, H.; Neugebauer, J.: Enhancing N solubility in diluted nitrides by surface kinetics: An ab-initio study. Spring meeting of the German Physical Society (DPG), Berlin, Germany (2008)

Abu-Farsakh, H.; Neugebauer, J.: Ab-initio study of the thermodynamics and kinetics of N at GaAs(001) surface. PAW workshop 2007, Goslar, Germany (2007)

Abu-Farsakh, H.; Neugebauer, J.: In-N anti-correlation in InGaAsN alloys: The delicate interplay between adatom thermodynamics and kinetics. Spring meeting of the German Physical Society (DPG), Regensburg, Germany (2007)

Abu-Farsakh, H.; Neugebauer, J.; Albrecht, M.: Ab-initio Studies on Alloy Formation in Diluted Nitrides. Workshop on Nitride Based Nanostructures, Berlin, Germany (2007)

Abu-Farsakh, H.; Neugebauer, J.: Tailoring the N-solubility in InGaAs-alloys by surface engineering: Applications and limits. 1. Harzer Ab initio Workshop, Clausthal, Germany (2006)

Abu-Farsakh, H.; Neugebauer, J.: Incorporation of N at GaAs and InAs surfaces: An ab-initio study. Technische Universität Berlin, Berlin, Germany (2006)

Abu-Farsakh, H.; Dick, A.; Neugebauer, J.: Incorporation of N at GaAs and InAs surfaces. Deutsche Physikalische Gesellschaft Spring Meeting of the Division Condensed Matter, Dresden, Germany (2006)

Abu-Farsakh, H.; Neugebauer, J.: Combined ab-initio and Monte Carlo calculations to explore the surface thermodynamics and kinetics of dilute nitrides. 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju Island, South Korea (2009)

Abu-Farsakh, H.; Neugebauer, J.: The role of surface kinetics in achieving high non-equilibrium N concentrations in bulk GaAs. DPG Spring Meeting 2009, Dresden, Germany (2009)

Abu-Farsakh, H.; Lymperakis, L.; Neugebauer, J.: Adatom kinetics on and in III-V semiconductor surfaces. Scientific Advisory Board Meeting 2009, MPIE, Düsseldorf, Germany (2009)

Abu-Farsakh, H.; Neugebauer, J.; Albrecht, M.: Ab-initio study of compositional anti-correlation of In and N in InGaAsN alloys. The 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, USA (2007)

Abu-Farsakh, H.; Neugebauer, J.: Enhancing the solubility of N in GaAs and InAs by surface kinetics. 28th International Conference on the Physics of Semiconductors, Vienna, Austria (2006)

Abu-Farsakh, H.; Neugebauer, J.: Enhancing bulk solubility by surface engineering: An ab-initio study. Workshop: Ab initio Description of Iron and Steel, Status and future challenges, Ringberg Castle, Germany (2006)

Abu-Farsakh, H.: Understanding the interplay between thermodynamics and surface kinetics in the growth of dilute nitride alloys from first principles. Dissertation, University of Paderborn, Paderborn, Germany (2010)