Marquardt, O.; Boeck, S.; Freysoldt, C.; Hickel, T.; Schulz, S.; Neugebauer, J.; O'Reilly, E. P.: A generalized plane-wave formulation of k · p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures. Computational Materials Science 95, pp. 280 - 287 (2014)

Barthel, S.; Schuh, K.; Marquardt, O.; Hickel, T.; Neugebauer, J.; Jahnke, F.; Czycholl, G.: Interplay between Coulomb interaction and quantum-confined Stark-effect in polar and nonpolar wurtzite InN/GaN quantum dots. European Physical Journal B 86 (11), 449 (2013)

Marquardt, O.; Hickel, T.; Neugebauer, J.: Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells. Applied Physics Letters 103 (7), pp. 073115-1 - 073115-4 (2013)

Marquardt, O.; Schulz, S.; Freysoldt, C.; Boeck, S.; Hickel, T.; O’Reilly, E. P.; Neugebauer, J.: A flexible, plane-wave based multiband k . p model. Optical and Quantum Electronics 44 (3-5), pp. 183 - 188 (2012)

Schuh, K.; Barthel, S.; Marquardt, O.; Hickel, T.; Neugebauer, J.; Czycholl, G.; Jahnke, F.: Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects. Applied Physics Letters 100, pp. 092103-1 - 092103-4 (2012)

Marquardt, O.; Hickel, T.; Neugebauer, J.; Gambaryan, K. M.; Aroutiounian, V. M.: Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures. Journal of Applied Physics 110 (4), pp. 043708-1 - 043708-6 (2011)

Lymperakis, L.; Abu-Farsakh, H.; Marquardt, O.; Hickel, T.; Neugebauer, J.: Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures. Physica Status Solidi B 248 (8), pp. 1837 - 1852 (2011)

Marquardt, O.; Boeck, S.; Freysoldt, C.; Hickel, T.; Neugebauer, J.: Plane-wave implementation of the real-space k.p formalism and continuum elasticity theory. Computer Physics Communications 181 (4), pp. 765 - 771 (2010)

Marquardt, O.; Hickel, T.; Neugebauer, J.: Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots. Journal of Applied Physics 106, pp. 083707-1 - 083707-7 (2009)

Young, T. D.; Marquardt, O.: Influence of strain and polarization on electronic properties of a GaN/AlN quantum dot. Physica Status Solidi C C6 (S2), pp. S557 - S560 (2009)

Marquardt, O.; Mourad, D.; Schulz, S.; Hickel, T.; Czycholl, G.; Neugebauer, J.: A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. Physical Review B 78, 235302 (2008)

Marquardt, O.; Schulz, S.; O’Reilly, E. P.; Freysoldt, C.; Boeck, S.; Hickel, T.; Neugebauer, J.: A flexible, plane-wave-based formulation of continuum elasticity and multiband k.p models. 11th Intern. Conference on Numerical Simulation of Optoelectronic Devices, Rome, Italy, September 05, 2011 - September 08, 2011., (2011)

Marquardt, O.; Gambaryan, K. M.; Aroutiounian, V. M.; Hickel, T.; Neugebauer, J.: Growth process, characterization and optoelectronic properties of InAsSbP dot-pit cooperative nanostructures. VCIAN 2010, Santorini, Greece (2010)

Marquardt, O.; Hickel, T.; Neugebauer, J.: Polarization-induced charge carrier separation in realistic polar and nonpolar GaN quantum dots. Computational Materials Science on Complex Energy Landscapes Workshop, Imst, Austria (2010)

Marquardt, O.; Hickel, T.; Neugebauer, J.: Polarization-induced charge carrier separation in realistic polar and nonpolar grown GaN quantum dots. Collaborative Conference on Interacting Nanostructures CCIN'09, San Diego, CA, USA (2009)

Marquardt, O.; Hickel, T.; Neugebauer, J.: Optical properties of polar and nonpolar III-nitride quantum dots. workshop "Physics of nitride-based nanostructured light-emitting devices", Bremen, Germany (2009)

Marquardt, O.; Hickel, T.; Neugebauer, J.: Application of an eight-band k.p model to study III-nitride semiconductor. DPG Spring Meeting 2009, Dresden, Germany (2009)

Marquardt, O.; Hickel, T.; Neugebauer, J.: Investigation of group III-nitride semiconductor nanostructures using an eight-band k.p formalism. APS March meeting, Pittsburgh, PA, USA (2009)

Marquardt, O.; Hickel, T.; Neugebauer, J.: Modeling of electronic and optical properties of GaN/AlN quantum dots by using the k.p-method. Bremen DFG Forschergruppe: Workshop in Riezlern, Riezlern, Austria (2008)

Marquardt, O.; Hickel, T.; Neugebauer, J.: Effect of strain and polarization on the electronic properties of 2-, 1- and 0-dimensional semiconductor nanostructures. Computational Materials Science Workshop, Ebernburg Castle, Germany (2008)