Lymperakis, L.: Surface rehybridization and strain effects on the composition and the properties of ternary III Nitride alloys. 19th International Conference on Crystal Growth and Epitaxy, Keystone, CO, USA (2019)
Lymperakis, L.: Elastically Frustrated Rehybridization: Implications in Alloy Ordering and Strong Compositional Limitations in Epitaxial InGaN Films. 1st German Austrian Conference of Crystal Growth, Vienna, Austria (2018)
Lymperakis, L.: Physics, growth mechanisms, and peculiarities of III-N surfaces from ab-initio. Seminar at Institute for solid state physics, Technical University Berlin, Berlin, Germany (2017)
Lymperakis, L.: Elastically frustrated rehybridization of InGaN surfaces: Implications on growth temperature and alloy ordering. Spring school on short period superlattices, Warsaw, Poland (2017)
Lymperakis, L.: Epitaxial Growth of III-Nitrides: Insights from Density Functional Theory Calculations. Seminar at University of Crete, Physics Department, Crete, Greece (2016)
Lymperakis, L.: Interplay of kinetics and thermodynamics of epitaxially grown wide bandgap semiconductors. 10th Asian-European Conference on Plasma Surface Engineering, Jeju Island, South Korea (2015)
Lymperakis, L.; Weidlich, P. H.; Eisele, H.; Schnedler, M.; Nys, J.-P.; Grandidier, B.; Stievenard, D.; Dunin-Borkowski, R.; Neugebauer, J.; Ebert, P.: Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach. 10th International Conference on Nitride Semiconductors, Washigton DC, USA (2013)
Schulz, T.; Remmele, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.: Alloy fluctuations in III-Nitrides revisited by aberration corrected transmission electron microscopy. International Workshop on Nitride Semiconductors 2012, Sapporo, Japan (2012)
Lymperakis, L.: Ab initio calculations of energetics, adatom kinetics, and electronic structure of nonpolar and semipolar III-Nitride surfaces. PolarCoN Summer School, Kostanz, Germany (2012)
Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.: Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
Lymperakis, L.; Albrecht, M.; Neugebauer, J.: Excitonic emission from a-type screw dislocations in GaN. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
von Pezold, J.; Lymperakis, L.; Neugebauer, J.: Towards an ab-initio based understanding of H-embrittlement: An atomistic study of the HELP mechanism. Joint Hydrogenius and ICNER International Workshop on Hydrogen-Materials Interactions, Kyushu, Japan (2012)
Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. 9th International Conference of Nitride Semi-Conductors, Glasgow, UK (2011)
The wide tunability of the fundamental electronic bandgap by size control is a key attribute of semiconductor nanocrystals, enabling applications spanning from biomedical imaging to optoelectronic devices. At finite temperature, exciton-phonon interactions are shown to exhibit a strong impact on this fundamental property.
In this project, we work on the use of a combinatorial experimental approach to design advanced multicomponent multi-functional alloys with rapid alloy prototyping. We use rapid alloy prototyping to investigate five multicomponent Invar alloys with 5 at.% addition of Al, Cr, Cu, Mn and Si to a super Invar alloy (Fe63Ni32Co5; at.%), respectively…
In this project we conduct together with Dr. Sandlöbes at RWTH Aachen and the department of Prof. Neugebauer ab initio calculations for designing new Mg – Li alloys. Ab initio calculations can accurately predict basic structural, mechanical, and functional properties using only the atomic composition as a basis.