Lymperakis, L.: Surface rehybridization and strain effects on the composition and the properties of ternary III Nitride alloys. 19th International Conference on Crystal Growth and Epitaxy, Keystone, CO, USA (2019)
Lymperakis, L.: Elastically Frustrated Rehybridization: Implications in Alloy Ordering and Strong Compositional Limitations in Epitaxial InGaN Films. 1st German Austrian Conference of Crystal Growth, Vienna, Austria (2018)
Lymperakis, L.: Physics, growth mechanisms, and peculiarities of III-N surfaces from ab-initio. Seminar at Institute for solid state physics, Technical University Berlin, Berlin, Germany (2017)
Lymperakis, L.: Elastically frustrated rehybridization of InGaN surfaces: Implications on growth temperature and alloy ordering. Spring school on short period superlattices, Warsaw, Poland (2017)
Lymperakis, L.: Epitaxial Growth of III-Nitrides: Insights from Density Functional Theory Calculations. Seminar at University of Crete, Physics Department, Crete, Greece (2016)
Lymperakis, L.: Interplay of kinetics and thermodynamics of epitaxially grown wide bandgap semiconductors. 10th Asian-European Conference on Plasma Surface Engineering, Jeju Island, South Korea (2015)
Lymperakis, L.; Weidlich, P. H.; Eisele, H.; Schnedler, M.; Nys, J.-P.; Grandidier, B.; Stievenard, D.; Dunin-Borkowski, R.; Neugebauer, J.; Ebert, P.: Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach. 10th International Conference on Nitride Semiconductors, Washigton DC, USA (2013)
Schulz, T.; Remmele, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.: Alloy fluctuations in III-Nitrides revisited by aberration corrected transmission electron microscopy. International Workshop on Nitride Semiconductors 2012, Sapporo, Japan (2012)
Lymperakis, L.: Ab initio calculations of energetics, adatom kinetics, and electronic structure of nonpolar and semipolar III-Nitride surfaces. PolarCoN Summer School, Kostanz, Germany (2012)
Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.: Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
Lymperakis, L.; Albrecht, M.; Neugebauer, J.: Excitonic emission from a-type screw dislocations in GaN. International Conference on Extended Defects in Semiconductors, Thessaloniki, Greek (2012)
von Pezold, J.; Lymperakis, L.; Neugebauer, J.: Towards an ab-initio based understanding of H-embrittlement: An atomistic study of the HELP mechanism. Joint Hydrogenius and ICNER International Workshop on Hydrogen-Materials Interactions, Kyushu, Japan (2012)
Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. 9th International Conference of Nitride Semi-Conductors, Glasgow, UK (2011)
Max Planck scientists design a process that merges metal extraction, alloying and processing into one single, eco-friendly step. Their results are now published in the journal Nature.
Scientists of the Max-Planck-Institut für Eisenforschung pioneer new machine learning model for corrosion-resistant alloy design. Their results are now published in the journal Science Advances
In collaboration with Dr. Edgar Rauch, SIMAP laboratory, Grenoble, and Dr. Wolfgang Ludwig, MATEIS, INSA Lyon, we are developing a correlative scanning precession electron diffraction and atom probe tomography method to access the three-dimensional (3D) crystallographic character and compositional information of nanomaterials with unprecedented…
A high degree of configurational entropy is a key underlying assumption of many high entropy alloys (HEAs). However, for the vast majority of HEAs very little is known about the degree of short-range chemical order as well as potential decomposition. Recent studies for some prototypical face-centered cubic (fcc) HEAs such as CrCoNi showed that…
Electron channelling contrast imaging (ECCI) is a powerful technique for observation of extended crystal lattice defects (e.g. dislocations, stacking faults) with almost transmission electron microscopy (TEM) like appearance but on bulk samples in the scanning electron microscope (SEM).
About 90% of all mechanical service failures are caused by fatigue. Avoiding fatigue failure requires addressing the wide knowledge gap regarding the micromechanical processes governing damage under cyclic loading, which may be fundamentally different from that under static loading. This is particularly true for deformation-induced martensitic…
We simulate the ionization contrast in field ion microscopy arising from the electronic structure of the imaged surface. For this DFT calculations of the electrified surface are combined with the Tersoff-Hamann approximation to electron tunneling. The approach allows to explain the chemical contrast observed for NiRe alloys.
Decarbonisation of the steel production to a hydrogen-based metallurgy is one of the key steps towards a sustainable economy. While still at the beginning of this transformation process, with multiple possible processing routes on different technological readiness, we conduct research into the related fundamental scientific questions at the MPIE.