Faceting of grain boundaries has a strong impact on the properties of structural, functional, and optoelectronic materials. In this project, we employ density-functional theory and modified embedded atom method calculations to investigate the energetics and thermodynamic stability of facets and line junctions in Silicon. We find that higher energy metastable GB phases can be stabilized by thermodynamics and not kinetics when constituting the facets at line junctions. This is in contrast to the common perception that the properties of faceting are merely driven by the anisotropic GB energies.
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