Publications
Journal Article (40)
1.
Journal Article
132 (22), 223102 (2022)
Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates. Journal of Applied Physics 2.
Journal Article
30 (1), 015002 (2021)
MEAM interatomic potentials of Ni, Re, and Ni–Re alloys for atomistic fracture simulations. Modelling and Simulation in Materials Science and Engineering 3.
Journal Article
130 (18), 185702 (2021)
Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination. Journal of Applied Physics 4.
Journal Article
11 (1), 20606 (2021)
Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content. Scientific Reports 5.
Journal Article
5 (4), 044605 (2021)
Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations. Physical Review Materials 6.
Journal Article
4 (8), 083604 (2020)
Phase diagram of grain boundary facet and line junctions in silicon. Physical Review Materials 7.
Journal Article
4 (7), 073404 (2020)
Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials 8.
Journal Article
9 (1), 9047 (2019)
Role of hole confinement in the recombination properties of InGaN quantum structures. Scientific Reports 9.
Journal Article
9 (1), 15907 (2019)
Al5+αSi5+δN12, a new Nitride compound. Scientific Reports 10.
Journal Article
121 (015702), 015702, pp. 1 - 5 (2018)
Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries. Physical Review Letters 11.
Journal Article
8 (6), 065301 (2018)
Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces. AIP Advances 12.
Journal Article
2 (1), 011601 (2018)
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells. Physical Review Materials 13.
Journal Article
95 (19), 195314 (2017)
Adsorption and desorption of hydrogen at nonpolar GaN(1(1)over-bar00) surfaces: Kinetics and impact on surface vibrational and electronic properties. Physical Review B 14.
Journal Article
3 (4), 041303 (2016)
Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Applied Physics Reviews 15.
Journal Article
119 (22), 224305 (2016)
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy. Journal of Applied Physics 16.
Journal Article
252 (5), pp. 855 - 865 (2015)
Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity. Physica Status Solidi B 17.
Journal Article
90 (24), 241201 (2014)
Origin of the unusually strong luminescence of a-type screw dislocations in GaN. Physical Review B 18.
Journal Article
89 (8), 085307 (2014)
Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach. Physical Review B 19.
Journal Article
115 (3), 033113 (2014)
Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Journal of Applied Physics 20.
Journal Article
103 (15), 152101 (2013)
Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of nanowires. Applied Physics Letters