Project group leader

Dr. Liverios Lymperakis
Liverios Lymperakis
Phone: +49 211 6792 785
+49 211 6792 586
Room: 1169

Key Publications

1.
Liverios Lymperakis, Tobias Schulz, Christoph Freysoldt, Mariia Anikeeva, Zhizhong Chen, Xiantong Zheng, Bo Shen, Caroline Chèze, Marcin Siekacz, Xianqiang Wang, Martin R. Albrecht, and Jörg Neugebauer, "Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells," Physical Review Materials 2 (1), 011601 (2018).
2.
Liverios Lymperakis, "Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces," AIP Advances 8 (6), 065301 (2018).
3.
Christian Liebscher, Andreas Stoffers, Masud Alam, Liverios Lymperakis, Oana Cojocaru-Mirédin, Baptiste Gault, Jörg Neugebauer, Gerhard Dehm, Christina Scheu, and Dierk Raabe, "Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries," Physical Review Letters 121 (015702), 1 -5 (2018).
4.
Liverios Lymperakis, Jörg Neugebauer, Marcel Himmerlich, Stefan Krischok, Marcel Rink, Jörg Kröger, and Vladimir M. Polyakov, "Adsorption and desorption of hydrogen at nonpolar GaN(1(1)over-bar00) surfaces: Kinetics and impact on surface vibrational and electronic properties," Physical Review B 95 (19), 195314 (2017).
5.
Andrew Duff, Liverios Lymperakis, and Jörg Neugebauer, "Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach," Physical Review B 89 (8), 085307 (2014).
6.
Marcel Himmerlich, Liverios Lymperakis, Richard Gutt, Pierre Lorenz, Jörg Neugebauer, and Stefan Krischok, "GaN(0001)surface states: Experimental and theoretical fingerprints to identify surface reconstructions," Physical Review B 88 (12), 125304 (2013).
7.
Toni Markurt, Liverios Lymperakis, Jörg Neugebauer, Philipp Drechsel, Peter Stauß, Tobias Schulz, Thilo Remmele, Vincenzo Grillo, Enzo Rotunno, and Martin R. Albrecht, "Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN," Physical Review Letters 110 (3), 036103 (2013).

The Growth Modelling Group

Growth Modelling

The growth modeling project group investigates the epitaxial growth and the properties of compound semiconductors and nanostructures. The aim of the project group Growth Modelling is to investigate the physics underlying the growth of semiconductor materials.
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The research interests of the group focus on:

  • The thermodynamics and kinetics of epitaxial growth.
  • The electronic properties and energetics of surfaces and interfaces. 
  • The growth and the properties of semiconductor nanostructures.

The group has a strong focus on III-Nitride materials and on surface and extended defect related topics. The majority of the activities are closely interlinked by experimental works (both growth and characterization) within the MPIE and beyond.

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