Project group leader

Dr. Liverios Lymperakis
Liverios Lymperakis
Phone: +49 211 6792 785
+49 211 6792 586

Key Publications

1.
Martin Albrecht, Liverios Lymperakis, and Jörg Neugebauer, "Origin of the unusually strong luminescence of a-type screw dislocations in GaN," Physical Review B 90 (24), 241201 (2014).
2.
Andrew Duff, Liverios Lymperakis, and Jörg Neugebauer, "Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach," Physical Review B 89 (8), 085307 (2014).
3.
Marcel Himmerlich, Liverios Lymperakis, Richard Gutt, Pierre Lorenz, Jörg Neugebauer, and Stefan Krischok, "GaN(0001)surface states: Experimental and theoretical fingerprints to identify surface reconstructions," Physical Review B 88 (12), 125304 (2013).
4.
Toni Markurt, Liverios Lymperakis, Jörg Neugebauer, Philipp Drechsel, Peter Stauß, Tobias Schulz, Thilo Remmele, Vincenzo Grillo, Enzo Rotunno, and Martin R. Albrecht, "Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN," Physical Review Letters 110 (3), 036103 (2013).

The Growth Modelling Group

Growth Modelling

The aim of the project group Growth Modelling is to investigate the physics underlying the growth of semiconductor materials. The group has a strong focus on III-Nitride materials and on surface and extended defect related topics.

The aim of the project group Growth Modelling is to investigate the physics underlying the growth of semiconductor materials. The group has a strong focus on III-Nitride materials and on surface and extended defect related topics. The majority of the activities are closely interlinked by experimental works (both growth and characterization) within the MPIE and beyond.

Integrated partial charge density of the states at the onset of the CBM along the <11-20> direction.
Integrated partial charge density of the states at the onset of the CBM along the <11-20> direction.

Surface studies

The activities involve the ab initio based simulations on the energetics, atomic geometry, and electronic structure of III-Nitride surfaces. 

Partial charge density of the highest occupied (left) and the lowest unoccupied (tight) states at &Gamma; point of the BZ for a supercell with a dislocation dipole in the quadrupolar configuration. Large/green (small/blue) balls indicate Ga (N) atoms. The screw two dislocations are located at the center and at the four corners of the supercell.&nbsp;
Partial charge density of the highest occupied (left) and the lowest unoccupied (tight) states at Γ point of the BZ for a supercell with a dislocation dipole in the quadrupolar configuration. Large/green (small/blue) balls indicate Ga (N) atoms. The screw two dislocations are located at the center and at the four corners of the supercell.  [less]

Extended defects

One of the controversial issues in the field of III-Nitrides is the effect dislocations have on the optoelectronic properties of the devices. The activities focus on the investigations of the atomic geometry, energetics, as well as on the effect the short and long range strain fields associated with dislocations have on the electronic properties of III-Nitride materials.

 
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