Gault, B.; Katnagallu, S.: Atom probe microscopy: a new playground for big data analysis? Workshop Big-Data-Driven Materials Science, Ringberg Castle, Rottach, Germany (2016)
Gault, B.; De Geuser, F.: A perspective on the ion projection in field ion & atom probe microscopy. Atom Probe Tomography & Microscopy 2016, Gyeongju, South Korea (2016)
Raabe, D.; Choi, P.-P.; Gault, B.; Ponge, D.; Yao, M.; Herbig, M.: Segregation engineering for self-organized nanostructuring of materials - from atoms to properties? APT&M 2016 - Atom Probe Tomography & Microscopy 2016 (55th IFES) , Gyeongju, South Korea (2016)
Kuzmina, M.; Gault, B.; Herbig, M.; Ponge, D.; Sandlöbes, S.; Raabe, D.: From grains to atoms: ping-pong between experiment and simulation for understanding microstructure mechanisms. Res Metallica Symposium, Department of Materials Engineering, KU Leuven, Leuven, The Netherlands (2016)
Herbig, M.; Ponge, D.; Gault, B.; Borchers, C.; Raabe, D.: Segregation and phase transformation at dislocations during aging in a Fe-9%Mn steel studied by correlative TEM-atom probe tomography. MSE 2014, Darmstadt, Germany (2014)
Krämer, M.; Favelukis, B.; Sokol, M.; Rosen, B. A.; Eliaz, N.; Kim, S.-H.; Gault, B.: Facilitating Atom Probe Tomography of Free-Standing 2D MXene Films. Atom Probe Tomography & Microscopy (APT&M) 2023, Leuven, Belgium (2023)
Bueno Villoro, R.; Luo, T.; Bishara, H.; Abdellaoui, L.; Gault, B.; Wood, M.; Snyder, G. J.; Scheu, C.; Zhang, S.: Effect of grain boundaries on electrical conductivity in Ti(Co,Fe)Sb half Heusler thermoelectrics. 719. WE-Heraeus-Seminar, Understanding Transport Processes on the Nanoscale for Energy Harvesting Devices, online (2021)
International researcher team presents a novel microstructure design strategy for lean medium-manganese steels with optimized properties in the journal Science
The main aspect of this project is to understand how hydrogen interacts with dislocations/ stacking faults at the stress concentrated crack tip. A three-point bending test has been employed for this work.