Publications
Journal Article (2)
1.
Journal Article
3 (4), 041303 (2016)
Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Applied Physics Reviews 2.
Journal Article
119 (22), 224305 (2016)
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy. Journal of Applied Physics Conference Paper (1)
3.
Conference Paper
9768 , 97681G . SPIE Conference on Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, San Francisco, CA, USA, February 13, 2016 - February 18, 2016. (2016)
Development of semipolar (11-22) LEDs on GaN templates. In: Proceedings of SPIE Conference on Light-Emitting Diodes - Materials, Devices, and Applications for Solid State Lighting XX, Vol. Talk (2)
4.
Talk
Ordering Phenomena in InGaN Alloys-An Ab-Initio Thermodynamics Study. International Workshop on Nitride Semiconductors (IWN2016), Orlando, FL, USA (2016)
5.
Talk
Epitaxial Growth of III-Nitrides: Insights from Density Functional Theory Calculations. Seminar at University of Crete, Physics Department, Crete, Greece (2016)