Jung, C.; Jang, K.; Zhang, S.; Bueno Villoro, R.; Choi, P.-P.; Scheu, C.: Sb-doping induced order to disorder transition enhances the thermal stability of NbCoSn1-xSbx half-Heusler semiconductors. The 20th International Microscopy Congress, PS-07.2. Microscopy of Semiconductor Materials and Devices, Busan, Republic of Korea (2023)
Bueno Villoro, R.: Electron microscopy investigations to understand the transport properties of energy materials. Physics Department, Technical University of Denmark, Kongens Lyngby, Denmark (2023)
Bueno Villoro, R.: Effect of grain boundary phases on the properties of half Heusler thermoelectrics. Northwestern University, Evanston, IL, USA (2023)
Bueno Villoro, R.: Application of NbTiFeSb half Heusler thermoelectric materials. Colloquium, Leibniz-Institut für Festkörper- und Werkstoffforschung, Dresden, Germany (2022)
Mattlat, D. A.; Bueno Villoro, R.; Jung, C.; Naderloo, R. H.; He, R.; Nielsch, K.; Zavanelli, D.; Snyder, G. J.; Zhang, S.; Scheu, C.: Electron microscopy characterization of grain boundaries in Nb1-xTixFeSb based half-Heusler thermoelectric materials. Electron Microscopy Congress (EMC) 2024, Copenhagen, Denmark (2024)
Mattlat, D. A.; Bueno Villoro, R.; Jung, C.; Scheu, C.; Zhang, S.; Naderloo, R. H.; Nielsch, K.; He, .; Zavanelli, D.; Snyder, G. J.: Effective doping of InSbat the grain boundaries in Nb1-xTixFeSb based Half-Heusler thermoelectricsfor high electrical conductivity and Seebeckcoefficient. 40th International & 20th European Conference on Thermoelectrics, Krakow, Poland (accepted)
Bueno Villoro, R.; Zavanelli, D.; Jung, C.; Mattlat, D. A.; Naderloo, R. H.; Pérez, N. A.; Nielsch, K.; Snyder, G. J.; Scheu, C.; He, R.et al.; Zhang, S.: Grain Boundary Phases in NbFeSb Half-Heusler Alloys: A New Avenue to Tune Transport Properties of Thermoelectric Materials. Microscopy of semiconducting materials conference, Cambridge, UK (2023)
Max Planck scientists design a process that merges metal extraction, alloying and processing into one single, eco-friendly step. Their results are now published in the journal Nature.
Electron channelling contrast imaging (ECCI) is a powerful technique for observation of extended crystal lattice defects (e.g. dislocations, stacking faults) with almost transmission electron microscopy (TEM) like appearance but on bulk samples in the scanning electron microscope (SEM).