![© Max-Planck-Institut für Eisenforschung GmbH © Max-Planck-Institut für Eisenforschung GmbH](/3904764/header_image-1550747352.jpg?t=eyJ3aWR0aCI6ODQ4LCJmaWxlX2V4dGVuc2lvbiI6ImpwZyIsIm9ial9pZCI6MzkwNDc2NH0%3D--124a111684ebfde46c3559c00a3168b55325b398)
Publications of Toni Markurt
All genres
Journal Article (2)
1.
Journal Article
4 (7), 073404 (2020)
Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials 2.
Journal Article
110 (3), 036103 (2013)
Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters