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Journal Article (35)
1.
Journal Article
4 (8), 083604 (2020)
Phase diagram of grain boundary facet and line junctions in silicon. Physical Review Materials 2.
Journal Article
4 (7), 073404 (2020)
Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials 3.
Journal Article
9 (1), 9047-9057 (2019)
Role of hole confinement in the recombination properties of InGaN quantum structures. Scientific Reports 4.
Journal Article
9 (1), 15907 (2019)
Al5+αSi5+δN12, a new Nitride compound. Scientific Reports 5.
Journal Article
121 (015702), 015702, pp. 1 - 5 (2018)
Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries. Physical Review Letters 6.
Journal Article
8 (6), 065301 (2018)
Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces. AIP Advances 7.
Journal Article
2 (1), 011601 (2018)
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells. Physical Review Materials 8.
Journal Article
95 (19), 195314 (2017)
Adsorption and desorption of hydrogen at nonpolar GaN(1(1)over-bar00) surfaces: Kinetics and impact on surface vibrational and electronic properties. Physical Review B 9.
Journal Article
3 (4), 041303 (2016)
Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Applied Physics Reviews 10.
Journal Article
119 (22), 224305 (2016)
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy. Journal of Applied Physics 11.
Journal Article
252 (5), pp. 855 - 865 (2015)
Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity. Physica Status Solidi B 12.
Journal Article
90 (24), 241201 (2014)
Origin of the unusually strong luminescence of a-type screw dislocations in GaN. Physical Review B 13.
Journal Article
89 (8), 085307 (2014)
Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach. Physical Review B 14.
Journal Article
115 (3), 033113 (2014)
Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Journal of Applied Physics 15.
Journal Article
103 (15), 152101 (2013)
Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of nanowires. Applied Physics Letters 16.
Journal Article
103 (Applied Physics Letters), pp. 122104-1 - 122104-4 (2013)
Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces. Applied Physics Letters 17.
Journal Article
88 (12), 125304 (2013)
GaN(0001)surface states: Experimental and theoretical fingerprints to identify surface reconstructions. Physical Review B 18.
Journal Article
20, pp. 296 - 304 (2013)
Ab initio study of single-crystalline and polycrystalline elastic properties of Mg-substituted calcite crystals. Journal of the Mechanical Behavior of Biomedical Materials 19.
Journal Article
25 (4), 045008 (2013)
Atomic scale morphology, growth behaviour and electronic properties of semipolar {101̄3} GaN surfaces. Journal of Physics: Condensed Matter 20.
Journal Article
110 (3), 036103 (2013)
Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters