
Publications of Tobias Schulz
All genres
Journal Article (6)
1.
Journal Article
132 (22), 223102 (2022)
Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates. Journal of Applied Physics 2.
Journal Article
4 (7), 073404 (2020)
Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials 3.
Journal Article
9 (1), 9047 (2019)
Role of hole confinement in the recombination properties of InGaN quantum structures. Scientific Reports 4.
Journal Article
2 (1), 011601 (2018)
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells. Physical Review Materials 5.
Journal Article
115 (3), 033113 (2014)
Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Journal of Applied Physics 6.
Journal Article
110 (3), 036103 (2013)
Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters