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Journal Article (31)

  1. 1.
    Journal Article
    Liebscher, C.; Stoffers, A.; Alam, M.; Lymperakis, L.; Cojocaru-Mirédin, O.; Gault, B.; Neugebauer, J.; Dehm, G.; Scheu, C.; Raabe, D.: Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries. Physical Review Letters 121 (015702), 015702, pp. 1 - 5 (2018)
  2. 2.
    Journal Article
    Lymperakis, L.: Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces. AIP Advances 8 (6), 065301 (2018)
  3. 3.
    Journal Article
    Lymperakis, L.; Schulz, T.; Freysoldt, C.; Anikeeva, M.; Chen, Z.; Zheng, X.; Shen, B.; Chèze, C.; Siekacz, M.; Wang, X. et al.; Albrecht, M. R.; Neugebauer, J.: Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells. Physical Review Materials 2 (1), 011601 (2018)
  4. 4.
    Journal Article
    Lymperakis, L.; Neugebauer, J.; Himmerlich, M.; Krischok, S.; Rink, M.; Kröger, J.; Polyakov, V. M.: Adsorption and desorption of hydrogen at nonpolar GaN(1(1)over-bar00) surfaces: Kinetics and impact on surface vibrational and electronic properties. Physical Review B 95 (19), 195314 (2017)
  5. 5.
    Journal Article
    Zuniga-Perez, J.; Consonni, V.; Lymperakis, L.; Kong, X.; Trampert, A.; Fernandez-Garrido, S.; Brandt, O.; Renevier, H.; Keller, S.; Hestroffer, K. et al.; Wagner, M. R.; Reparaz, J. S.; Akyol, F.; Rajan, S.; Rennesson, S.; Palacios, T.; Feuillet, G.: Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Applied Physics Reviews 3 (4), 041303 (2016)
  6. 6.
    Journal Article
    Kruse, J. E.; Lymperakis, L.; Eftychis, S.; Adikimenakis, A.; Doundoulakis, G.; Tsagaraki, K.; Androulidaki, M.; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V. et al.; Normand, P.; Koukoula, T.; Kehagias, T.; Komninou, P.; Konstantinidis, G.; Georgakilas, A.: Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy. Journal of Applied Physics 119 (22), 224305 (2016)
  7. 7.
    Journal Article
    Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity. Physica Status Solidi B 252 (5), pp. 855 - 865 (2015)
  8. 8.
    Journal Article
    Albrecht, M.; Lymperakis, L.; Neugebauer, J.: Origin of the unusually strong luminescence of a-type screw dislocations in GaN. Physical Review B 90 (24), 241201 (2014)
  9. 9.
    Journal Article
    Duff, A.; Lymperakis, L.; Neugebauer, J.: Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach. Physical Review B 89 (8), 085307 (2014)
  10. 10.
    Journal Article
    Schulz, T.; Duff, A.; Remmele, M.; Korytov, T.; Markut, M.; Albrecht, M.; Lymperakis, L.; Neugebauer, J.; Chèze, C.; Skierbiszewski, C.: Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Journal of Applied Physics 115 (3), 033113 (2014)
  11. 11.
    Journal Article
    Lymperakis, L.; Weidlich, P. H.; Eisele, H.; Schnedler, M.; Nys, J. P.; Grandidier, B.; Stiévenard, D.; Dunin-Borkowski, R. E.; Neugebauer, J.; Ebert, P.: Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of nanowires. Applied Physics Letters 103 (15), 152101 (2013)
  12. 12.
    Journal Article
    Capiod, P.; Xu, T.; Nys, J. P.; Berthe, M.; Patriarche, G.; Lymperakis, L.; Neugebauer, J.; Caroff, P.; Dunin-Borkowski, R. E.; Ebert, P. et al.; Grandidier, B.: Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces. Applied Physics Letters 103 (Applied Physics Letters), pp. 122104-1 - 122104-4 (2013)
  13. 13.
    Journal Article
    Himmerlich, M.; Lymperakis, L.; Gutt, R.; Lorenz, P.; Neugebauer, J.; Krischok, S.: GaN(0001)surface states: Experimental and theoretical fingerprints to identify surface reconstructions. Physical Review B 88 (12), 125304 (2013)
  14. 14.
    Journal Article
    Zhu, L.-F.; Friák, M.; Lymperakis, L.; Titrian, H.; Aydin, U.; Janus, A. M.; Fabritius, H.-O.; Ziegler, A. S.; Nikolov, S. D.; Hemzalová, P. et al.; Raabe, D.; Neugebauer, J.: Ab initio study of single-crystalline and polycrystalline elastic properties of Mg-substituted calcite crystals. Journal of the Mechanical Behavior of Biomedical Materials 20, pp. 296 - 304 (2013)
  15. 15.
    Journal Article
    Kioseoglou, J.; Kalesaki, E.; Lymperakis, L.; Karakostas, T. H.; Komninou, P.: Atomic scale morphology, growth behaviour and electronic properties of semipolar {101̄3} GaN surfaces. Journal of Physics: Condensed Matter 25 (4), 045008 (2013)
  16. 16.
    Journal Article
    Markurt, T.; Lymperakis, L.; Neugebauer, J.; Drechsel, P.; Stauß, P.; Schulz, T.; Remmele, T.; Grillo, V.; Rotunno, E.; Albrecht, M. R.: Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters 110 (3), 036103 (2013)
  17. 17.
    Journal Article
    Petrov, M.; Lymperakis, L.; Friák, M.; Neugebauer, J.: Ab initio based conformational study of the crystalline alpha-chitin. Biopolymers 99, pp. 22 - 34 (2013)
  18. 18.
    Journal Article
    Kalesaki, E.; Lymperakis, L.; Kioseoglou, J.; Neugebauer, J.; Karakostas, T.; Komninou, P.: Reconstructions and electronic structure of (11-22) and (11-2-2) semipolar AlN surfaces. Journal of Applied Physics 112, pp. 033510-1 - 033510-6 (2012)
  19. 19.
    Journal Article
    Friák, M.; Hickel, T.; Grabowski, B.; Lymperakis, L.; Udyansky, A.; Dick, A.; Ma, D.; Roters, F.; Zhu, L.-F.; Schlieter, A. et al.; Kühn, U.; Ebrahimi, Z.; Lebensohn, R. A.; Holec, D.; Eckert, J.; Emmerich, H.; Raabe, D.; Neugebauer, J.: Methodological challenges in combining quantum-mechanical and continuum approaches for materials science applications. European Physics Journal Plus 126, pp. 101-1 - 101-22 (2011)
  20. 20.
    Journal Article
    Lymperakis, L.; Abu-Farsakh, H.; Marquardt, O.; Hickel, T.; Neugebauer, J.: Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures. Physica Status Solidi B 248 (8), pp. 1837 - 1852 (2011)
 
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