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Zeitschriftenartikel (35)

1.
Zeitschriftenartikel
Alam, M.; Lymperakis, L.; Neugebauer, J.: Phase diagram of grain boundary facet and line junctions in silicon. Physical Review Materials 4 (8), 083604 (2020)
2.
Zeitschriftenartikel
Schulz, T.; Lymperakis, L.; Anikeeva, M.; Siekacz, M.; Wolny, P.; Markurt, T.; Albrecht, M. R.: Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials 4 (7), 073404 (2020)
3.
Zeitschriftenartikel
Anikeeva, M.; Albrecht, M. R.; Mahler, F.; Tomm, J. W.; Lymperakis, L.; Chèze, C.; Calarco, R.; Neugebauer, J.; Schulz, T.: Role of hole confinement in the recombination properties of InGaN quantum structures. Scientific Reports 9 (1), 9047-9057 (2019)
4.
Zeitschriftenartikel
Dagher, R.; Lymperakis, L.; Delaye, V.; Largeau, L.; Michon, A.; Brault, J.; Vénnègues, P.: Al5+αSi5+δN12, a new Nitride compound. Scientific Reports 9 (1), 15907 (2019)
5.
Zeitschriftenartikel
Liebscher, C.; Stoffers, A.; Alam, M.; Lymperakis, L.; Cojocaru-Mirédin, O.; Gault, B.; Neugebauer, J.; Dehm, G.; Scheu, C.; Raabe, D.: Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries. Physical Review Letters 121 (015702), 015702, S. 1 - 5 (2018)
6.
Zeitschriftenartikel
Lymperakis, L.: Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces. AIP Advances 8 (6), 065301 (2018)
7.
Zeitschriftenartikel
Lymperakis, L.; Schulz, T.; Freysoldt, C.; Anikeeva, M.; Chen, Z.; Zheng, X.; Shen, B.; Chèze, C.; Siekacz, M.; Wang, X. et al.; Albrecht, M. R.; Neugebauer, J.: Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells. Physical Review Materials 2 (1), 011601 (2018)
8.
Zeitschriftenartikel
Lymperakis, L.; Neugebauer, J.; Himmerlich, M.; Krischok, S.; Rink, M.; Kröger, J.; Polyakov, V. M.: Adsorption and desorption of hydrogen at nonpolar GaN(1(1)over-bar00) surfaces: Kinetics and impact on surface vibrational and electronic properties. Physical Review B 95 (19), 195314 (2017)
9.
Zeitschriftenartikel
Zuniga-Perez, J.; Consonni, V.; Lymperakis, L.; Kong, X.; Trampert, A.; Fernandez-Garrido, S.; Brandt, O.; Renevier, H.; Keller, S.; Hestroffer, K. et al.; Wagner, M. R.; Reparaz, J. S.; Akyol, F.; Rajan, S.; Rennesson, S.; Palacios, T.; Feuillet, G.: Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Applied Physics Reviews 3 (4), 041303 (2016)
10.
Zeitschriftenartikel
Kruse, J. E.; Lymperakis, L.; Eftychis, S.; Adikimenakis, A.; Doundoulakis, G.; Tsagaraki, K.; Androulidaki, M.; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V. et al.; Normand, P.; Koukoula, T.; Kehagias, T.; Komninou, P.; Konstantinidis, G.; Georgakilas, A.: Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy. Journal of Applied Physics 119 (22), 224305 (2016)
11.
Zeitschriftenartikel
Duff, A.; Lymperakis, L.; Neugebauer, J.: Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity. Physica Status Solidi B 252 (5), S. 855 - 865 (2015)
12.
Zeitschriftenartikel
Albrecht, M.; Lymperakis, L.; Neugebauer, J.: Origin of the unusually strong luminescence of a-type screw dislocations in GaN. Physical Review B 90 (24), 241201 (2014)
13.
Zeitschriftenartikel
Duff, A.; Lymperakis, L.; Neugebauer, J.: Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach. Physical Review B 89 (8), 085307 (2014)
14.
Zeitschriftenartikel
Schulz, T.; Duff, A.; Remmele, M.; Korytov, T.; Markut, M.; Albrecht, M.; Lymperakis, L.; Neugebauer, J.; Chèze, C.; Skierbiszewski, C.: Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Journal of Applied Physics 115 (3), 033113 (2014)
15.
Zeitschriftenartikel
Lymperakis, L.; Weidlich, P. H.; Eisele, H.; Schnedler, M.; Nys, J. P.; Grandidier, B.; Stiévenard, D.; Dunin-Borkowski, R. E.; Neugebauer, J.; Ebert, P.: Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of nanowires. Applied Physics Letters 103 (15), 152101 (2013)
16.
Zeitschriftenartikel
Capiod, P.; Xu, T.; Nys, J. P.; Berthe, M.; Patriarche, G.; Lymperakis, L.; Neugebauer, J.; Caroff, P.; Dunin-Borkowski, R. E.; Ebert, P. et al.; Grandidier, B.: Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces. Applied Physics Letters 103 (Applied Physics Letters), S. 122104-1 - 122104-4 (2013)
17.
Zeitschriftenartikel
Himmerlich, M.; Lymperakis, L.; Gutt, R.; Lorenz, P.; Neugebauer, J.; Krischok, S.: GaN(0001)surface states: Experimental and theoretical fingerprints to identify surface reconstructions. Physical Review B 88 (12), 125304 (2013)
18.
Zeitschriftenartikel
Zhu, L.-F.; Friák, M.; Lymperakis, L.; Titrian, H.; Aydin, U.; Janus, A. M.; Fabritius, H.-O.; Ziegler, A. S.; Nikolov, S. D.; Hemzalová, P. et al.; Raabe, D.; Neugebauer, J.: Ab initio study of single-crystalline and polycrystalline elastic properties of Mg-substituted calcite crystals. Journal of the Mechanical Behavior of Biomedical Materials 20, S. 296 - 304 (2013)
19.
Zeitschriftenartikel
Kioseoglou, J.; Kalesaki, E.; Lymperakis, L.; Karakostas, T. H.; Komninou, P.: Atomic scale morphology, growth behaviour and electronic properties of semipolar {101̄3} GaN surfaces. Journal of Physics: Condensed Matter 25 (4), 045008 (2013)
20.
Zeitschriftenartikel
Markurt, T.; Lymperakis, L.; Neugebauer, J.; Drechsel, P.; Stauß, P.; Schulz, T.; Remmele, T.; Grillo, V.; Rotunno, E.; Albrecht, M. R.: Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters 110 (3), 036103 (2013)
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