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Zeitschriftenartikel (4)

  1. 1.
    Zeitschriftenartikel
    Lymperakis, L.; Schulz, T.; Freysoldt, C.; Anikeeva, M.; Chen, Z.; Zheng, X.; Shen, B.; Chèze, C.; Siekacz, M.; Wang, X. et al.; Albrecht, M. R.; Neugebauer, J.: Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells. Physical Review Materials 2 (1), 011601 (2018)
  2. 2.
    Zeitschriftenartikel
    Albrecht, M.; Lymperakis, L.; Neugebauer, J.: Origin of the unusually strong luminescence of a-type screw dislocations in GaN. Physical Review B 90 (24), 241201 (2014)
  3. 3.
    Zeitschriftenartikel
    Schulz, T.; Duff, A.; Remmele, M.; Korytov, T.; Markut, M.; Albrecht, M.; Lymperakis, L.; Neugebauer, J.; Chèze, C.; Skierbiszewski, C.: Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Journal of Applied Physics 115 (3), 033113 (2014)
  4. 4.
    Zeitschriftenartikel
    Markurt, T.; Lymperakis, L.; Neugebauer, J.; Drechsel, P.; Stauß, P.; Schulz, T.; Remmele, T.; Grillo, V.; Rotunno, E.; Albrecht, M. R.: Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters 110 (3), 036103 (2013)
 
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