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Zeitschriftenartikel (4)
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1.ZeitschriftenartikelElastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells. Physical Review Materials 2 (1), 011601 (2018)
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2.ZeitschriftenartikelOrigin of the unusually strong luminescence of a-type screw dislocations in GaN. Physical Review B 90 (24), 241201 (2014)
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3.ZeitschriftenartikelSeparating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Journal of Applied Physics 115 (3), 033113 (2014)
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4.ZeitschriftenartikelBlocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN. Physical Review Letters 110 (3), 036103 (2013)