Publications of Liverios Lymperakis

Chatzopoulou, P.; Hilliard, D.; Vasileiadis, I. G.; Florini, N.; Devulapalli, V.; Liebscher, C.; Lymperakis, L.; Komninou, P.; Kehagias, T.; Dimakis, E. et al.; Dimitrakopulos, G. P.: Elastic limit and relaxation of GaAs/In(Al,Ga)As core/shell nanowires for near-infrared applications. Nanotechnology 36 (9), 095703 (2025)

Freter, L.; Lymperakis, L.; Schnedler, M.; Eisele, H.; Jin, L.; Liu, J.; Sun, Q.; Dunin-Borkowski, R. E.; Ebert, P.: Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces. Journal of Vacuum Science & Technology A 42 (2), 023202 (2024)

Schulz, T.; Yoo, S.-H.; Lymperakis, L.; Richter, C.; Zatterin, E.; Lachowski, A.; Hartmann, C.; Foronda, H. M.; Brandl, C.; Lugauer, H. J. et al.; Hoffmann, M. P.; Albrecht, M.: Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates. Journal of Applied Physics 132 (22), 223102 (2022)

Alam, M.; Lymperakis, L.; Groh, S.; Neugebauer, J.: MEAM interatomic potentials of Ni, Re, and Ni–Re alloys for atomistic fracture simulations. Modelling and Simulation in Materials Science and Engineering 30 (1), 015002 (2021)

Vasileiadis, I. G.; Lymperakis, L.; Adikimenakis, A.; Gkotinakos, A.; Devulapalli, V.; Liebscher, C.; Androulidaki, M.; Hübner, R.; Karakostas, T.; Georgakilas, A. I. et al.; Komninou, P.; Dimakis, E.; Dimitrakopulos, G. P.: Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content. Scientific Reports 11 (1), 20606 (2021)

Yoo, S.-H.; Lymperakis, L.; Neugebauer, J.: Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations. Physical Review Materials 5 (4), 044605 (2021)

Alam, M.; Lymperakis, L.; Neugebauer, J.: Phase diagram of grain boundary facet and line junctions in silicon. Physical Review Materials 4 (8), 083604 (2020)

Anikeeva, M.; Albrecht, M. R.; Mahler, F.; Tomm, J. W.; Lymperakis, L.; Chèze, C.; Calarco, R.; Neugebauer, J.; Schulz, T.: Role of hole confinement in the recombination properties of InGaN quantum structures. Scientific Reports 9 (1), 9047 (2019)

Dagher, R.; Lymperakis, L.; Delaye, V.; Largeau, L.; Michon, A.; Brault, J.; Vénnègues, P.: Al_5+αSi_5+δN₁₂, a new Nitride compound. Scientific Reports 9 (1), 15907 (2019)