Publications from the Defect Chemistry and Spectroscopy group

Zhang, S.; Zhang, Y.; Cui, Y.; Freysoldt, C.; Neugebauer, J.; Lieten, R. R.; Barnard, J. S.; Humphreys, C. J.: Interface structure and chemistry of GaN on Ge(111). Physical Review Letters 111 (25), 256101 (2013)

Pfanner, G.; Freysoldt, C.; Neugebauer, J.; Inam, F.; Drabold, D. A.; Jarolimek, K.; Zeman, M.: Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters. Physical Review B 87 (12), 125308, pp. 1 - 7 (2013)

Freysoldt, C.; Pfanner, G.; Neugebauer, J.: Defects in amorphous silicon from H insertion. Workshop "Spins as Functional Probes in Solar Energy Research", Berlin, Germany (2013)

Grabowski, M.: Entwicklung und Validierung DFT-basierter EAM-Potentiale. Bachelor, Heinrich-Heine-Universität, Düsseldorf, Germany (2013)