Jung, C.; Jang, K.; Zhang, S.; Bueno Villoro, R.; Choi, P.-P.; Scheu, C.: Sb-doping induced order to disorder transition enhances the thermal stability of NbCoSn1-xSbx half-Heusler semiconductors. The 20th International Microscopy Congress, PS-07.2. Microscopy of Semiconductor Materials and Devices, Busan, Republic of Korea (2023)
Bueno Villoro, R.: Electron microscopy investigations to understand the transport properties of energy materials. Physics Department, Technical University of Denmark, Kongens Lyngby, Denmark (2023)
Bueno Villoro, R.: Effect of grain boundary phases on the properties of half Heusler thermoelectrics. Northwestern University, Evanston, IL, USA (2023)
Bueno Villoro, R.: Application of NbTiFeSb half Heusler thermoelectric materials. Colloquium, Leibniz-Institut für Festkörper- und Werkstoffforschung, Dresden, Germany (2022)
Mattlat, D. A.; Bueno Villoro, R.; Jung, C.; Naderloo, R. H.; He, R.; Nielsch, K.; Zavanelli, D.; Snyder, G. J.; Zhang, S.; Scheu, C.: Electron microscopy characterization of grain boundaries in Nb1-xTixFeSb based half-Heusler thermoelectric materials. Electron Microscopy Congress (EMC) 2024, Copenhagen, Denmark (2024)
Mattlat, D. A.; Bueno Villoro, R.; Jung, C.; Scheu, C.; Zhang, S.; Naderloo, R. H.; Nielsch, K.; He, .; Zavanelli, D.; Snyder, G. J.: Effective doping of InSbat the grain boundaries in Nb1-xTixFeSb based Half-Heusler thermoelectricsfor high electrical conductivity and Seebeckcoefficient. 40th International & 20th European Conference on Thermoelectrics, Krakow, Poland (accepted)
Bueno Villoro, R.; Zavanelli, D.; Jung, C.; Mattlat, D. A.; Naderloo, R. H.; Pérez, N. A.; Nielsch, K.; Snyder, G. J.; Scheu, C.; He, R.et al.; Zhang, S.: Grain Boundary Phases in NbFeSb Half-Heusler Alloys: A New Avenue to Tune Transport Properties of Thermoelectric Materials. Microscopy of semiconducting materials conference, Cambridge, UK (2023)