Vortrag
Jung, C.; Jang, K.; Zhang, S.; Bueno Villoro, R.; Choi, P.-P.; Scheu, C.: Sb-doping induced order to disorder transition enhances the thermal stability of NbCoSn1-xSbx half-Heusler semiconductors. The 20th International Microscopy Congress, PS-07.2. Microscopy of Semiconductor Materials and Devices, Busan, Republic of Korea (2023)