Publikationen von J. Neugebauer

Friák, M.; Neugebauer, J.: Anomalous equilibrium volume change of magnetic Fe–Al crystals. American Physica Society March Meeting, Baltimore, MD, USA (2006)

Hickel, T.; Grabowski, B.; Neugebauer, J.: Temperature and magnetic field dependent properites of Ni₂MnGa. DPG Spring Meeting of the Division Condensed Matter, Dresden, Germany (2006)

Friák, M.; Neugebauer, J.: Anomalous equilibrium volume change of magnetic Fe–Al crystals. International workshop on Ab initio Description of Iron and Steel (ADIS2006), Status and future challenges, Ringberg Castle, Germany (2006)

Hickel, T.; Grabowski, B.; Neugebauer, J.: Temperature dependent properites of Shape-memory alloys. Physics Seminar of Loughborough University, Loughborough, UK (2006)

Lymperakis, L.; Neugebauer, J.: Electronic properties of non-stoichiometric dislocation cores in GaN. Materials Research Society fall meeting, Boston, MA, USA (2005)

Wahn, M.; Neugebauer, J.: The Bandgaps of GaN and InN in Zinc-blende and Wurtzite Phase: DFT Calculations Using the Exact Exchange (EXX) Functional. Workshop Forschergruppe Bremen, Bad Bederkesa, Germany (2005)

Hickel, T.; Grabowski, B.; Neugebauer, J.: Determination of Thermodynamic Quantities from Ab Initio Methods. WTL Learnshop, Aachen, Germany (2005)

Hickel, T.; Neugebauer, J.: Temperature-dependent ab initio investigation of the martensitic phase transition in magnetic SMAs. Kickoff-Workshop of SPP1239, Dresden, Germany (2005)

Neugebauer, J.: Ab initio Thermodynamics: Concepts and Application on Bulk Properties and Epitaxial Growth. UCSB-Workshop, Berlin, Germany (2005)

Neugebauer, J.: Multiscale Simulation of Crystal Growth Processes. IWCGT-3 Workshop, Beatenberg, Switzerland (2005)

Neugebauer, J.: Ab initio based multiscale modeling of dislocations in GaN. E-MRS-Fall Meeting, Warsaw, Poland (2005)

Neugebauer, J.: Surface Physics of Group III-Nitride Semicondutors. ECCOSS 23, Berlin, Germany (2005)

Lymperakis, L.; Neugebauer, J.: The role of strain fields, core structure, and native defects on the electrical activity of dislocations in GaN. The 6th International Conference on Nitride Semiconductors, Bremen (2005)

Neugebauer, J.: Ab initio Multiskalensimulationen zum Wachstum und zur Defektstruktur von Gruppe-III-Nitriden. Kolloquium, Universität Bochum (2005)

Neugebauer, J.: Ab initio Simulations of Solid State Processes. Geomat-Konferenz, Aachen, Germany (2005)

Ismer, L.; Ireta, J.; Neugebauer, J.; Scheffler, M.: A DFT-GGA based thermodynamic analysis of the secondary structure of proteins. DPG-Jahrestagung, Berlin, Germany (2005)

Wahn, M.; Neugebauer, J.: Generalized Wannier functions: An accurate and efficient way to construct ab-initio tight-binding orbitals. DPG-Tagung, Berlin, Germany (2005)

Lymperakis, L.; Neugebauer, J.: Formation of steps and vicinal surfaces on GaN (0001) surfaces: Implications on surface morphologies and surface roughening. DPG spring meeting, Berlin, Germany (2005)

Neugebauer, J.: Computergestütztes Materialdesign mittels ab initio Multiskalenmethoden. Kolloquium IWF, Dresden, Germany (2005)

Neugebauer, J.: Ab initio Multiskalensimulationen zu Defekten und zum Wachstum von breitlückigen Halbleitern. SiC-Kolloquium, Universität Erlangen-Nürnberg (2005)