Publikationen von Mariia Anikeeva

Schulz, T.; Lymperakis, L.; Anikeeva, M.; Siekacz, M.; Wolny, P.; Markurt, T.; Albrecht, M. R.: Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials 4 (7), 073404 (2020)

Anikeeva, M.; Albrecht, M. R.; Mahler, F.; Tomm, J. W.; Lymperakis, L.; Chèze, C.; Calarco, R.; Neugebauer, J.; Schulz, T.: Role of hole confinement in the recombination properties of InGaN quantum structures. Scientific Reports 9 (1), 9047 (2019)

Lymperakis, L.; Schulz, T.; Freysoldt, C.; Anikeeva, M.; Chen, Z.; Zheng, X.; Shen, B.; Chèze, C.; Siekacz, M.; Wang, X. et al.; Albrecht, M. R.; Neugebauer, J.: Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells. Physical Review Materials 2 (1), 011601 (2018)