Publikationen von Liverios Lymperakis
Alle Typen
Zeitschriftenartikel (41)
1.
Zeitschriftenartikel
36 (9), 095703 (2025)
Elastic limit and relaxation of GaAs/In(Al,Ga)As core/shell nanowires for near-infrared applications. Nanotechnology 2.
Zeitschriftenartikel
132 (22), 223102 (2022)
Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates. Journal of Applied Physics 3.
Zeitschriftenartikel
30 (1), 015002 (2021)
MEAM interatomic potentials of Ni, Re, and Ni–Re alloys for atomistic fracture simulations. Modelling and Simulation in Materials Science and Engineering 4.
Zeitschriftenartikel
130 (18), 185702 (2021)
Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination. Journal of Applied Physics 5.
Zeitschriftenartikel
11 (1), 20606 (2021)
Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content. Scientific Reports 6.
Zeitschriftenartikel
5 (4), 044605 (2021)
Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations. Physical Review Materials 7.
Zeitschriftenartikel
4 (8), 083604 (2020)
Phase diagram of grain boundary facet and line junctions in silicon. Physical Review Materials 8.
Zeitschriftenartikel
4 (7), 073404 (2020)
Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials 9.
Zeitschriftenartikel
9 (1), 9047 (2019)
Role of hole confinement in the recombination properties of InGaN quantum structures. Scientific Reports 10.
Zeitschriftenartikel
9 (1), 15907 (2019)
Al5+αSi5+δN12, a new Nitride compound. Scientific Reports 11.
Zeitschriftenartikel
121 (015702), 015702, S. 1 - 5 (2018)
Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries. Physical Review Letters 12.
Zeitschriftenartikel
8 (6), 065301 (2018)
Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces. AIP Advances 13.
Zeitschriftenartikel
2 (1), 011601 (2018)
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells. Physical Review Materials 14.
Zeitschriftenartikel
95 (19), 195314 (2017)
Adsorption and desorption of hydrogen at nonpolar GaN(1(1)over-bar00) surfaces: Kinetics and impact on surface vibrational and electronic properties. Physical Review B 15.
Zeitschriftenartikel
3 (4), 041303 (2016)
Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Applied Physics Reviews 16.
Zeitschriftenartikel
119 (22), 224305 (2016)
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy. Journal of Applied Physics 17.
Zeitschriftenartikel
252 (5), S. 855 - 865 (2015)
Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity. Physica Status Solidi B 18.
Zeitschriftenartikel
90 (24), 241201 (2014)
Origin of the unusually strong luminescence of a-type screw dislocations in GaN. Physical Review B 19.
Zeitschriftenartikel
89 (8), 085307 (2014)
Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach. Physical Review B 20.
Zeitschriftenartikel
115 (3), 033113 (2014)
Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging. Journal of Applied Physics