Publikationen von Colin J. Humphreys

Pristovsek, M.; Han, Y.; Zhu, T.; Oehler, F.; Tang, F.; Oliver, R. A.; Humphreys, C. J.; Tytko, D.; Choi, P.-P.; Raabe, D. et al.; Brunner, F.; Weyers, M.: Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120). Semiconductor Science and Technology 31 (8), 085007 (2016)

Zhang, S.; Cui, Y.; Griffiths, J. T.; Fu, W. Y.; Freysoldt, C.; Neugebauer, J.; Humphreys, C. J.; Oliver, R. A.: Difference in linear polarization of biaxially strained In_xGa_1-xN alloys on nonpolar a-plane and m-plane GaN. Physical Review B 92 (24), 245202 (2015)

Zhang, S.; Zhang, Y.; Cui, Y.; Freysoldt, C.; Neugebauer, J.; Lieten, R. R.; Barnard, J. S.; Humphreys, C. J.: Interface structure and chemistry of GaN on Ge(111). Physical Review Letters 111 (25), 256101 (2013)