Publikationen von Christoph Freysoldt
Alle Typen
Zeitschriftenartikel (61)
41.
Zeitschriftenartikel
92 (24), 245202 (2015)
Difference in linear polarization of biaxially strained InxGa1-xN alloys on nonpolar a-plane and m-plane GaN. Physical Review B 42.
Zeitschriftenartikel
92 (8), 085204, S. 5204 - 5210 (2015)
Role of biaxial strain and microscopic ordering for structural and electronic properties of InxGa1-xN. Physical Review B 43.
Zeitschriftenartikel
90 (24), 245301 (2014)
Ordering phenomena and formation of nanostructures in InxGa1−xN layers coherently grown on GaN(0001). Physical Review B 44.
Zeitschriftenartikel
95, S. 280 - 287 (2014)
A generalized plane-wave formulation of k · p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures. Computational Materials Science 45.
Zeitschriftenartikel
113 (13), 136102 (2014)
Negatively charged ions on Mg(0001) surfaces: Appearance and origin of attractive adsorbate-adsorbate interactions. Physical Review Letters 46.
Zeitschriftenartikel
86 (1), 253 (2014)
First-principles calculations for point defects in solids. Reviews of Modern Physics 47.
Zeitschriftenartikel
111 (25), 256101 (2013)
Interface structure and chemistry of GaN on Ge(111). Physical Review Letters 48.
Zeitschriftenartikel
87 (12), 125308, S. 1 - 7 (2013)
Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters. Physical Review B 49.
Zeitschriftenartikel
358 (17), S. 2063 - 2066 (2012)
The dangling-bond defect in amorphous silicon: Statistical random versus kinetically driven defect geometries. Journal of Non-Crystalline Solids 50.
Zeitschriftenartikel
44 (3-5), S. 183 - 188 (2012)
A flexible, plane-wave based multiband k . p model. Optical and Quantum Electronics 51.
Zeitschriftenartikel
85 (19), 195202, S. 1 - 8 (2012)
Ab initio EPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion. Physical Review B 52.
Zeitschriftenartikel
84, 245203, S. 1 - 10 (2011)
Combined multifrequency EPR and DFT study of dangling bonds in a-Si:H. Physical Review B 53.
Zeitschriftenartikel
84 (19), 193304, S. 1 - 4 (2011)
Quasiparticle band offsets of semiconductor heterojunctions from a generalized marker method. Physical Review B 54.
Zeitschriftenartikel
84 (8), 085101, S. 1 - 11 (2011)
Construction and performance of fully numerical optimum atomic basis sets. Physical Review B 55.
Zeitschriftenartikel
83 (14), 144110, S. 1 - 8 (2011)
Ab initio study of electron paramagnetic resonance hyperfine structure of the silicon dangling bond: Role of the local environment. Physical Review B 56.
Zeitschriftenartikel
182 (3), S. 543 - 554 (2011)
The object-oriented DFT program library S/PHI/nX. Computer Physics Communications 57.
Zeitschriftenartikel
81, 224109, S. 1 - 10 (2010)
Native and hydrogen-containing point defects in Mg3N2: A density functional theory study. Physical Review B 58.
Zeitschriftenartikel
181 (4), S. 765 - 771 (2010)
Plane-wave implementation of the real-space k.p formalism and continuum elasticity theory. Computer Physics Communications 59.
Zeitschriftenartikel
79, 241103(R), S. 1 - 4 (2009)
Direct minimization technique for metals in density-functional theory. Physical Review B 60.
Zeitschriftenartikel
102 (1), 016402 (2009)
Fully ab initio finite-size corrections for charged defect supercell calculations. Physical Review Letters