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Advanced AFM based electrical characterization on the nanometer scale

  • Date: Apr 27, 2015
  • Time: 11:00 - 11:45
  • Speaker: Prof. Christian Teichert
  • Institute of Physics, Montanuniversität Leoben, 8700 Leoben, Austria
  • Location: Max-Planck-Institut für Eisenforschung GmbH
  • Room: CM Conference Room Nr. 1174
  • Host: Prof. Gerhard Dehm
  • Contact: merten@mpie.de
Besides morphological characterization, atomic-force microscopy (AFM) based techniques can also successfully be employed to study electrical and optoelectronic properties on the nanometer scale via conductive atomic-force microscopy (C-AFM) and Kelvin Probe Force Microscopy [1]. This will be demonstrated for dielectric thin films [2] as well as for of individual semiconductor nanostructures like upright standing ZnO nanorods [3,4] polycrystalline ZnO multilayer varistors [5,6], Ge nanodomes [7] and nanostructured graphene flakes [8]. ........................ [1] C. Teichert, I. Beinik, in “Scanning Probe Microscopy in Nanoscience and Nanotechnology”, Vol. 2, Edited by B. Bhushan, (ISBN 978-3-642-10496-1) (Springer-Verlag, Berlin, 2011), pp. 691-721 [2] S. Kremmer, et al. J. Appl. Phys. 67 (2005) 074315. [3] I. Beinik, et al., J. Appl. Phys. 110 (2011) 052005. [4] I. Beinik, et al., Beilstein J. Nanotechnol. 4 (2013) [5] M. Hofstätter, et al., J. Eur. Ceram. Soc. 33 (2013) 3473. [6] A. Nevosad, Proc. SPIE 8626 (2013) 862618. [7] Kratzer, et al., Phys. Rev. B 86 (2012) 245320. [8] B. Vasić, et al., Nanotechnology 24 (2013) 015303.
 
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