Publications

Journal Article (8)

1.
Journal Article
Rinke, P.; Qteish, A.; Neugebauer, J.; Freysoldt, C.; Scheffler, M.: Combining GW calculations with exact-exchange density-functional theory: An analysis of valence-band photoemission for compound seminconductors. New Journal of Physics 7, pp. 126 - 160 (2005)
2.
Journal Article
Albrecht, M.; Lymperakis, L.; Neugebauer, J.; Northrup, J. E.; Kirste, L.; Leroux, M.; Grzegory, I.; Porowski, S.; Strunk, H. P.: Chemically ordered AlGaN alloys: Spontaneous formation of natural quantum dots. Physical Review B 71 (3), 035314 (2005)
3.
Journal Article
Ireta, J.; Neugebauer, J.; Scheffler, M.; Rojo, A.; Galvan, M.: Structural transitions in the polyalanine a-Helix under uniaxial strain. Journal of the American Chemical Society 127, 49, pp. 17241 - 17244 (2005)
4.
Journal Article
Ismer, L.; Ireta, J.; Boeck, S.; Neugebauer, J.: Phonon-spectra and thermodynamic properties of the infinite polyalanine alpha-helix: A DFT-based harmonic vibrational analysis. Physical Review E 71, 031911 (2005)
5.
Journal Article
Northrup, J. E.; Neugebauer, J.: Metal-adlayer-stabilized ZnO(0001) sufaces: Towards a new growth mode for oxides. Applied Physics Letters 87, 141914 (2005)
6.
Journal Article
Qteish, A.; Al-Sharif, A. I.; Fuchs, M.; Scheffler, M.; Boeck, S.; Neugebauer, J.: Role of semicore states in the electronic structure of group-III nitrides: An exact-exchange study. Physical Review B 72, 155317 (2005)
7.
Journal Article
Qteish, A.; Al-Sharif, A. I.; Fuchs, M.; Scheffler, M.; Boeck, S.; Neugebauer, J.: Exact-exchange calculations of the electronic structure of AlN, GaN and InN. Computer Physics Communications 169, p. 28 (2005)
8.
Journal Article
Smith, A. R.; Yang, R.; Yang, H. Q.; Dick, A.; Neugebauer, J.; Lambrecht, W. R. L.: Recent Advances in Atomic-Scale Spin-Polarized Scanning. Microscopy Research and Technology 66, pp. 72 - 84 (2005)

Book Chapter (1)

9.
Book Chapter
Nolting, W.; Hickel, T.; Santos, C.: Carrier Induced Ferromagnetism in Concentrated and Diluted Local-Moment Systems. In: Local moment ferromagnets: unique properties for modern applications, pp. 47 - 70. Springer, Berlin, Heidelberg, Germany (2005)

Talk (17)

10.
Talk
Lymperakis, L.; Neugebauer, J.: Electronic properties of non-stoichiometric dislocation cores in GaN. Materials Research Society fall meeting, Boston, MA, USA (2005)
11.
Talk
Wahn, M.; Neugebauer, J.: The Bandgaps of GaN and InN in Zinc-blende and Wurtzite Phase: DFT Calculations Using the Exact Exchange (EXX) Functional. Workshop Forschergruppe Bremen, Bad Bederkesa, Germany (2005)
12.
Talk
Hickel, T.; Grabowski, B.; Neugebauer, J.: Determination of Thermodynamic Quantities from Ab Initio Methods. WTL Learnshop, Aachen, Germany (2005)
13.
Talk
Hickel, T.; Neugebauer, J.: Temperature-dependent ab initio investigation of the martensitic phase transition in magnetic SMAs. Kickoff-Workshop of SPP1239, Dresden, Germany (2005)
14.
Talk
Neugebauer, J.: Ab initio Thermodynamics: Concepts and Application on Bulk Properties and Epitaxial Growth. UCSB-Workshop, Berlin, Germany (2005)
15.
Talk
Neugebauer, J.: Multiscale Simulation of Crystal Growth Processes. IWCGT-3 Workshop, Beatenberg, Switzerland (2005)
16.
Talk
Neugebauer, J.: Ab initio based multiscale modeling of dislocations in GaN. E-MRS-Fall Meeting, Warsaw, Poland (2005)
17.
Talk
Neugebauer, J.: Surface Physics of Group III-Nitride Semicondutors. ECCOSS 23, Berlin, Germany (2005)
18.
Talk
Lymperakis, L.; Neugebauer, J.: The role of strain fields, core structure, and native defects on the electrical activity of dislocations in GaN. The 6th International Conference on Nitride Semiconductors, Bremen (2005)
19.
Talk
Neugebauer, J.: Ab initio Multiskalensimulationen zum Wachstum und zur Defektstruktur von Gruppe-III-Nitriden. Kolloquium, Universität Bochum (2005)
20.
Talk
Neugebauer, J.: Ab initio Simulations of Solid State Processes. Geomat-Konferenz, Aachen, Germany (2005)
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