Max-Planck-Institut für Eisenforschung GmbH

At the Max-Planck Institut für Eisenforschung GmbH (MPIE), research is carried out on iron, steel and related materials, such as nickel, titanium and intermetallic phase alloys. An essential target of the investigations is an improved understanding of the complex physical processes and chemical reactions of these materials. In addition, new high-performance materials with outstanding physical and mechanical properties are developed for use as high-tech structural and functional components. In this way, basic research is amalgamated with innovative developments relevant to applications and process technology. The Max-Planck Institute for Iron Research GmbH is financed in equal proportions by the Max-Planck Society for the Advancement of Science and the Steel Institute VDEh. The Institute is organised in four departments.  

 

Computational Materials Design

Interface Chemistry and Surface Engineering

Microstructure Physics and Metal Forming

N. N. (formerly Material Diagnostics and Steel Technology)

 

The departments are divided into working groups with specific research activities. These are complementary and together contribute to achieving departmental targets.   Apart from the research on which the individual departments concentrate, there are interdisciplinary fields of research in which concerted initiatives help achieve scientific and technological breakthroughs in significant and highly competitive areas. These include the development of new grades of steel with special material properties, the investigation of surface and interface area stability, research into the connection between microstructure and material properties, the development of new types of experimental methods for material characterisation and a new generation of computer-assisted simulation tools, which are based on quantum mechanics multiscale methods.

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Event Info
CM Seminar Andre Prößdorf (Paul-Drude-Institut für Festkörperelektronik, Berlin)
Self-assembled GaSb nano islands on Si 111 surfaces
  GaSb nano island on Si are very promising for application in the mid-infrared optoelectronic and the telecommunication area, lasing wavelengths of 1.3 µm or 1.55 µm are required for absorption and optical dispersion in fiber optics. We study the early stages of GaSb/Si(111) heteroepitaxy by molecular beam epitaxy (MBE) using in-situ RHEED and ex situ AFM and SEM. Applying a constant Sb to Ga flux ratio of 4:1 and a substrate temperature of 400 °C, three-dimensional islands are initially evolving. These GaSb islands initially nucleate with a triangular pyramidal shape, whereas for longer growth durations, the shape changes into flat equilateral triangles. The average height amounts is 7 to 10 nm, the lateral dimension figures in the range 70 nm to 100 nm and their density varies between 1-9×109 cm², depending on flux and growth time, respectively.
Organiser Oliver Marquardt
marquardt@mpie.de
Location CM Seminar room
Begin Thu, Feb 11, 2010 at 10:00 AM

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