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Multiscale properties of novel III-V semiconductors
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Open Positions
Currently, we are offering the following positions:
Development and application of ab-initio based multiscale methods to accurately describe structure and electronic properties of interfaces and interfacial defects in modern wide band gap semiconductors (main focus on nitride-based III-V semiconductors).
This page is maintained by Blazej Grabowski. Last update: 28.06.2010